| 器件名 |
厂商 |
描 述 |
功能 |
| AP-T01 |
Grayhill |
SPECIAL SWITCH-JOYSTICK SWITCH, 4PST, MOMENTARY, 2A, 28VDC, THROUGH HOLE-STRAIGHT |
下载
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| AP-T02 |
Grayhill |
SPECIAL SWITCH-JOYSTICK SWITCH, 4PST, MOMENTARY, 2A, 28VDC, THROUGH HOLE-STRAIGHT |
下载
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| APT05DC120HJ |
Microsemi |
5 A, 1200 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE |
下载
|
| APT06DC60HJ |
Microsemi |
6 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE |
下载
|
| APT1001 |
ADPOW |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
下载
|
| APT1001 |
Advanced Power |
power mos VI is a new generation of low gate charge, high voltage N-channel enhancement mode power mosFETs |
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|
| APT100-101DN |
Microsemi |
TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,11A I(D),CHIP / DIE |
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|
| APT10011R5KN |
Microsemi |
1.5A, 1000V, 11.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
下载
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| APT10011R5KN |
ADPOW |
Power Field-Effect Transistor, 1.5A I(D), 1000V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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|
| APT1001R1AVR |
ADPOW |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
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|
| APT1001R1AVR |
Advanced Power |
power mos V is a new generation of high voltage N-channel enhancement mode power mosFETs |
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|
| APT1001R1AVR |
Microsemi |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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|
| APT1001R1BFLC |
Microsemi |
11A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN |
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|
| APT1001R1BFLC |
ADPOW |
Power Field-Effect Transistor, 11A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN |
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|
| APT1001R1BN |
Microsemi |
MOSFET N-CH 1000V 10.5A TO247AD |
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|
| APT1001R1BN |
ADPOW |
Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD |
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|
| APT1001R1BN |
Advanced Power |
N-channel enhancement mode high voltage power mosfets |
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|
| APT1001R1BN-BUTT |
Microsemi |
10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
下载
|
| APT1001R1BN-BUTT |
ADPOW |
Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 |
下载
|
| APT1001R1BN-GULLWING |
Microsemi |
10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN |
下载
|
| APT1001R1BN-GULLWING |
ADPOW |
Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN |
下载
|
| APT1001R1BNR |
Microsemi |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
下载
|
| APT1001R1BNR |
ADPOW |
Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN |
下载
|
| APT1001R1BNR-BUTT |
Microsemi |
10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
下载
|
| APT1001R1BNR-GULLWING |
Microsemi |
10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN |
下载
|
| APT1001R1BVFR |
ADPOW |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
下载
|
| APT1001R1BVFR |
Advanced Power |
power mos V is a new generation of high voltage N-channel enhancement mode power mosFETs. |
下载
|
| APT1001R1BVFR |
Microsemi |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
下载
|
| APT1001R1DN |
Microsemi |
TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,CHIP / DIE |
下载
|
| APT1001R1DN |
ADPOW |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
下载
|