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aptiv

eeworld网站中关于aptiv有10000个元器件。有AP-T01、AP-T02等。可以通过横向对比他们之间的异同,来寻找器件间替代的可能。
器件名 厂商 描 述 功能
AP-T01 Grayhill SPECIAL SWITCH-JOYSTICK SWITCH, 4PST, MOMENTARY, 2A, 28VDC, THROUGH HOLE-STRAIGHT 下载
AP-T02 Grayhill SPECIAL SWITCH-JOYSTICK SWITCH, 4PST, MOMENTARY, 2A, 28VDC, THROUGH HOLE-STRAIGHT 下载
APT05DC120HJ Microsemi 5 A, 1200 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE 下载
APT06DC60HJ Microsemi 6 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE 下载
APT1001 ADPOW Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 下载
APT1001 Advanced Power power mos VI is a new generation of low gate charge, high voltage N-channel enhancement mode power mosFETs 下载
APT100-101DN Microsemi TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,11A I(D),CHIP / DIE 下载
APT10011R5KN Microsemi 1.5A, 1000V, 11.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 下载
APT10011R5KN ADPOW Power Field-Effect Transistor, 1.5A I(D), 1000V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB 下载
APT1001R1AVR ADPOW Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs 下载
APT1001R1AVR Advanced Power power mos V is a new generation of high voltage N-channel enhancement mode power mosFETs 下载
APT1001R1AVR Microsemi Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 下载
APT1001R1BFLC Microsemi 11A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN 下载
APT1001R1BFLC ADPOW Power Field-Effect Transistor, 11A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN 下载
APT1001R1BN Microsemi MOSFET N-CH 1000V 10.5A TO247AD 下载
APT1001R1BN ADPOW Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD 下载
APT1001R1BN Advanced Power N-channel enhancement mode high voltage power mosfets 下载
APT1001R1BN-BUTT Microsemi 10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 下载
APT1001R1BN-BUTT ADPOW Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 下载
APT1001R1BN-GULLWING Microsemi 10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN 下载
APT1001R1BN-GULLWING ADPOW Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, 3 PIN 下载
APT1001R1BNR Microsemi Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 下载
APT1001R1BNR ADPOW Power Field-Effect Transistor, 10.5A I(D), 1000V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN 下载
APT1001R1BNR-BUTT Microsemi 10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 下载
APT1001R1BNR-GULLWING Microsemi 10.5A, 1000V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN 下载
APT1001R1BVFR ADPOW Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 下载
APT1001R1BVFR Advanced Power power mos V is a new generation of high voltage N-channel enhancement mode power mosFETs. 下载
APT1001R1BVFR Microsemi Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 下载
APT1001R1DN Microsemi TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,CHIP / DIE 下载
APT1001R1DN ADPOW Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 下载
关于aptiv相关文档资料:
对应元器件 pdf文档资料下载
APT-10555 、 APT-10566 、 APT-12057 、 APT-12066 、 APT-18615 、 APT-18616 、 APT-18617 、 APT-18646 下载文档
AP-T01 、 AP-T02 、 AP-T11 、 AP-T12 下载文档
APT-108 、 APT-109 、 APT-116 下载文档
APT-106 、 APT-106-T 下载文档
APT-112 、 APT-113 下载文档
APT-104 下载文档
APT-104T 下载文档
aptiv资料比对:
型号 APT-10555 APT-10566 APT-12057 APT-12066 APT-18615 APT-18616 APT-18617 APT-18646
描述 Wide Band Medium Power Amplifier, 4500MHz Min, 10500MHz Max, Wide Band Medium Power Amplifier, 4500MHz Min, 10500MHz Max, Wide Band Medium Power Amplifier, 6000MHz Min, 12000MHz Max, Wide Band Medium Power Amplifier, 6000MHz Min, 12000MHz Max, Wide Band Medium Power Amplifier, 6000MHz Min, 18000MHz Max, Wide Band Medium Power Amplifier, 6000MHz Min, 18000MHz Max, Wide Band Medium Power Amplifier, 6000MHz Min, 18000MHz Max, Wide Band Medium Power Amplifier, 6000MHz Min, 18000MHz Max,
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
特性阻抗 50 Ω 50 Ω 50 Ω 50 Ω 50 Ω 50 Ω 50 Ω 50 Ω
构造 MODULE MODULE MODULE MODULE MODULE MODULE MODULE MODULE
最大输入功率 (CW) 20 dBm 20 dBm 20 dBm 20 dBm 20 dBm 20 dBm 20 dBm 20 dBm
最大工作频率 10500 MHz 10500 MHz 12000 MHz 12000 MHz 18000 MHz 18000 MHz 18000 MHz 18000 MHz
最小工作频率 4500 MHz 4500 MHz 6000 MHz 6000 MHz 6000 MHz 6000 MHz 6000 MHz 6000 MHz
最高工作温度 50 °C 50 °C 50 °C 50 °C 50 °C 50 °C 50 °C 50 °C
射频/微波设备类型 WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER
最大电压驻波比 2 2 2 2 2 2 2 2
Base Number Matches 1 1 1 1 1 - - -
厂商名称 - Avantek Inc Avantek Inc - - Avantek Inc Avantek Inc Avantek Inc
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