| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| UMB3 | ROHM(罗姆半导体) | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon | 下载 |
| UMB3C001 | United Microelectronics Corporation | Hard disk controller | 下载 |
| UMB3N | HTSEMI( Jin Yu Semiconductor ) | General purpose transistors (dual transistors) | 下载 |
| UMB3N | ROHM(罗姆半导体) | General purpose (dual digital transistors) | 下载 |
| UMB3N_1 | ROHM(罗姆半导体) | General purpose (dual digital transistors) | 下载 |
| UMB3NFHA | ROHM(罗姆半导体) | General purpose (Dual digital transistor) | 下载 |
| UMB3NFHATN | ROHM(罗姆半导体) | PNP+PNP DIGITAL TRANSISTOR (WITH | 下载 |
| UMB3NFHATR | ROHM(罗姆半导体) | Small Signal Bipolar Transistor | 下载 |
| UMB3NTL | ROHM(罗姆半导体) | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, | 下载 |
| UMB3NTN | ROHM(罗姆半导体) | 额定功率:150mW 集电极电流Ic:100mA 集射极击穿电压Vce:50V 晶体管类型:2 个 PNP 预偏压式(双) 双数字三极管,PNP,Vceo=-50V,Ic=-100mA | 下载 |
| UMB3NTR | ROHM(罗姆半导体) | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, | 下载 |
| UMB3TL | ROHM(罗姆半导体) | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOLD, UM6, 6 PIN | 下载 |
| UMB3TR | ROHM(罗姆半导体) | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOLD, UM6, 6 PIN | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| UMB3N 、 UMB3N_1 | 下载文档 |
| UMB3TL 、 UMB3TR | 下载文档 |
| UMB3NTN | 下载文档 |
| UMB3NTR | 下载文档 |
| UMB3NTL | 下载文档 |
| UMB3NFHATN | 下载文档 |
| UMB3C001 | 下载文档 |
| UMB3N | 下载文档 |
| UMB3 | 下载文档 |
| UMB3NFHATR | 下载文档 |
| 型号 | UMB3TR | UMB3TL |
|---|---|---|
| 描述 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOLD, UM6, 6 PIN | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, MINIMOLD, UM6, 6 PIN |
| 包装说明 | SMALL OUTLINE, R-PDSO-G6 | SMALL OUTLINE, R-PDSO-G6 |
| 针数 | 6 | 6 |
| Reach Compliance Code | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 |
| 其他特性 | DIGITAL, BUILT IN BIAS RESISTOR | DIGITAL, BUILT IN BIAS RESISTOR |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | 50 V |
| 配置 | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 100 | 100 |
| JESD-30 代码 | R-PDSO-G6 | R-PDSO-G6 |
| 元件数量 | 2 | 2 |
| 端子数量 | 6 | 6 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | PNP | PNP |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES |
| 端子形式 | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
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