| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| TGF2160 | TriQuint Semiconductor Inc. (Qorvo) | RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER | 下载 |
| TGF2160 | Qorvo | RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE | 下载 |
| TGF2160_15 | TriQuint Semiconductor Inc. (Qorvo) | 1600um Discrete GaAs pHEMT | 下载 |
RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
| 参数名称 | 属性值 |
| Product Attribute | Attribute Value |
| 制造商 Manufacturer | Qorvo |
| 产品种类 Product Category | RF JFET Transistors |
| RoHS | Details |
| Transistor Type | pHEMT |
| 技术 Technology | GaAs |
| Gain | 10.4 dB |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Vgs - Gate-Source Breakdown Voltage | - 7 V |
| Id - Continuous Drain Current | 517 mA |
| 最小工作温度 Minimum Operating Temperature | - 65 C |
| 最大工作温度 Maximum Operating Temperature | + 150 C |
| Pd-功率耗散 Pd - Power Dissipation | 5.6 W |
| 安装风格 Mounting Style | SMD/SMT |
| 系列 Packaging | Gel Pack |
| Configuration | Dual |
| Operating Frequency | 20 GHz |
| 工作温度范围 Operating Temperature Range | - 65 C to + 150 C |
| 产品 Product | RF JFET |
| 类型 Type | GaAs pHEMT |
| Forward Transconductance - Min | 619 mS |
| Number of Channels | 2 Channel |
| P1dB - Compression Point | 32.5 dBm |
| 工厂包装数量 Factory Pack Quantity | 100 |
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