| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| STW36NM60ND | ST(意法半导体) | MOSFET Auto-grade N-CH 600V 0.097Ohm typ 29A | 下载 |
MOSFET Auto-grade N-CH 600V 0.097Ohm typ 29A
| 参数名称 | 属性值 |
| Product Attribute | Attribute Value |
| 制造商 Manufacturer | ST(意法半导体) |
| 产品种类 Product Category | MOSFET |
| RoHS | Details |
| 技术 Technology | Si |
| 安装风格 Mounting Style | Through Hole |
| 封装 / 箱体 Package / Case | TO-247-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Id - Continuous Drain Current | 29 A |
| Rds On - Drain-Source Resistance | 110 mOhms |
| Vgs th - Gate-Source Threshold Voltage | 4 V |
| Vgs - Gate-Source Voltage | 25 V |
| Qg - Gate Charge | 80.4 nC |
| 最小工作温度 Minimum Operating Temperature | - 55 C |
| 最大工作温度 Maximum Operating Temperature | + 150 C |
| Configuration | Single |
| 资格 Qualification | AEC-Q100 |
| 系列 Packaging | Tube |
| Transistor Type | 1 N-Channel |
| Fall Time | 61.8 ns |
| Pd-功率耗散 Pd - Power Dissipation | 190 W |
| Rise Time | 53.4 ns |
| 工厂包装数量 Factory Pack Quantity | 600 |
| Typical Turn-Off Delay Time | 111 ns |
| Typical Turn-On Delay Time | 30 ns |
| 单位重量 Unit Weight | 1.340411 oz |
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