器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
RCX120N20 | ROHM(罗姆半导体) | MOSFET DRVE NCH MOSFET 10V | 下载 |
RCX120N20 | ISC | isc N-Channel MOSFET Transistor | 下载 |
MOSFET DRVE NCH MOSFET 10V
参数名称 | 属性值 |
产品种类 Product Category | MOSFET |
制造商 Manufacturer | ROHM(罗姆半导体) |
RoHS | Details |
技术 Technology | Si |
安装风格 Mounting Style | Through Hole |
封装 / 箱体 Package / Case | TO-220FP-3 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 200 V |
Id - Continuous Drain Current | 12 A |
Rds On - Drain-Source Resistance | 250 mOhms |
Vgs th - Gate-Source Threshold Voltage | 3.25 V |
Vgs - Gate-Source Voltage | 30 V |
Qg - Gate Charge | 15 nC |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Channel Mode | Enhancement |
系列 Packaging | Bulk |
Fall Time | 11 ns |
Pd-功率耗散 Pd - Power Dissipation | 40 W |
Rise Time | 33 ns |
工厂包装数量 Factory Pack Quantity | 500 |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 27 ns |
Typical Turn-On Delay Time | 20 ns |
单位重量 Unit Weight | 0.035274 oz |
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