器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
PHD13003C | WeEn Semiconductors | NPN power transistor with integrated diode | 下载 |
PHD13003C,126 | NXP(恩智浦) | TRANSISTOR,BJT,NPN,400V V(BR)CEO,1.5A I(C),TO-92 | 下载 |
PHD13003C126 | NXP(恩智浦) | Thick Film Resistors - SMD 1/10watt 10Kohms 1% | 下载 |
PHD13003C,126 | WeEn Semiconductors | 额定功率:2.1W 集电极电流Ic:1.5A 集射极击穿电压Vce:400V 晶体管类型:NPN | 下载 |
PHD13003C_15 | Philips Semiconductors (NXP Semiconductors N.V.) | NPN power transistor with integrated diode | 下载 |
PHD13003C_15 | NXP(恩智浦) | NPN power transistor with integrated diode | 下载 |
PHD13003C,412 | NXP(恩智浦) | Bipolar Transistors - BJT Single NPN 1.5A 2.1W | 下载 |
PHD13003C,412 | WeEn Semiconductors | 额定功率:2.1W 集电极电流Ic:1.5A 集射极击穿电压Vce:400V 晶体管类型:NPN | 下载 |
对应元器件 | pdf文档资料下载 |
---|---|
PHD13003C,126 、 PHD13003C,412 | 下载文档 |
PHD13003C_15 | 下载文档 |
PHD13003C126 | 下载文档 |
PHD13003C,412 | 下载文档 |
PHD13003C,126 | 下载文档 |
型号 | PHD13003C,412 | PHD13003C,126 |
---|---|---|
描述 | 额定功率:2.1W 集电极电流Ic:1.5A 集射极击穿电压Vce:400V 晶体管类型:NPN | 额定功率:2.1W 集电极电流Ic:1.5A 集射极击穿电压Vce:400V 晶体管类型:NPN |
厂商名称 | WeEn Semiconductors | WeEn Semiconductors |
包装说明 | , | , |
Reach Compliance Code | unknown | unknown |
ECCN代码 | EAR99 | EAR99 |
Factory Lead Time | 8 weeks | 8 weeks |
Is Samacsys | N | N |
Base Number Matches | 1 | 1 |
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