| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| PDTC114EK | Philips Semiconductors (NXP Semiconductors N.V.) | NPN resistor-equipped transistor | 下载 |
| PDTC114EK | NXP(恩智浦) | NPN resistor-equipped transistor | 下载 |
| PDTC114EK,115 | NXP(恩智浦) | TRANS PREBIAS NPN 250MW SMT3 | 下载 |
| PDTC114EK,135 | NXP(恩智浦) | TRANS PREBIAS NPN 250MW SMT3 | 下载 |
| PDTC114EK135 | NXP(恩智浦) | Bipolar Transistors - Pre-Biased TRANS RET TAPE-11 | 下载 |
| PDTC114EK-T | NXP(恩智浦) | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, BIP General Purpose Small Signal | 下载 |
| PDTC114EK/T3 | NXP(恩智浦) | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, BIP General Purpose Small Signal | 下载 |
| PDTC114EK/T4 | NXP(恩智浦) | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, BIP General Purpose Small Signal | 下载 |
| PDTC114EKT/R | NXP(恩智浦) | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, BIP General Purpose Small Signal | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| PDTC114EK-T 、 PDTC114EK/T3 、 PDTC114EK/T4 | 下载文档 |
| PDTC114EK,115 、 PDTC114EK,135 | 下载文档 |
| PDTC114EKT/R | 下载文档 |
| PDTC114EK135 | 下载文档 |
| PDTC114EK | 下载文档 |
| PDTC114EK | 下载文档 |
| 型号 | PDTC114EK-T | PDTC114EK/T3 | PDTC114EK/T4 |
|---|---|---|---|
| 描述 | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, BIP General Purpose Small Signal | TRANSISTOR 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, BIP General Purpose Small Signal |
| 零件包装代码 | SOT-23 | SOT-23 | SOT-23 |
| 包装说明 | SMALL OUTLINE, R-PDSO-G3 | PLASTIC, SC-59A, 3 PIN | SMALL OUTLINE, R-PDSO-G3 |
| 针数 | 3 | 3 | 3 |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 其他特性 | BUILT IN BIAS RESISTANCE RATIO IS 1 | BUILT IN BIAS RESISTANCE RATIO IS 1 | BUILT IN BIAS RESISTANCE RATIO IS 1 |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 30 | 30 | 30 |
| JEDEC-95代码 | TO-236 | TO-236 | TO-236 |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | - | 1 |
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