| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| PDTA143TE | Philips Semiconductors (NXP Semiconductors N.V.) | PNP resistor-equipped transistors: R1 = 4.7 KOHM, R2 = open | 下载 |
| PDTA143TE | NXP(恩智浦) | PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open | 下载 |
| PDTA143TE | Nexperia | Small Signal Bipolar Transistor | 下载 |
| PDTA143TE,115 | NXP(恩智浦) | TRANS PREBIAS PNP 150MW SC75 | 下载 |
| PDTA143TE115 | NXP(恩智浦) | Bipolar Transistors - Pre-Biased PNP W/RES 50V | 下载 |
| PDTA143TE,115 | Nexperia | PDTA143T series - PNP resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open SC-75 3-Pin | 下载 |
| PDTA143TEF | Philips Semiconductors (NXP Semiconductors N.V.) | PNP resistor-equipped transistors: R1 = 4.7 KOHM, R2 = open | 下载 |
| PDTA143TEF | Nexperia | Small Signal Bipolar Transistor | 下载 |
| PDTA143TEF | NXP(恩智浦) | PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open | 下载 |
| PDTA143TEF,115 | NXP(恩智浦) | PDTA143TEF | 下载 |
| PDTA143TEFT/R | NXP(恩智浦) | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-89, 3 PIN, BIP General Purpose Small Signal | 下载 |
| PDTA143TEFT/R | Nexperia | Small Signal Bipolar Transistor | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| PDTA143TE 、 PDTA143TEF 、 PDTA143TEFT/R | 下载文档 |
| PDTA143TE 、 PDTA143TEF | 下载文档 |
| PDTA143TE,115 、 PDTA143TE,115 | 下载文档 |
| PDTA143TE 、 PDTA143TEF | 下载文档 |
| PDTA143TEFT/R | 下载文档 |
| PDTA143TE115 | 下载文档 |
| PDTA143TEF,115 | 下载文档 |
| 型号 | PDTA143TEFT/R | PDTA143TE | PDTA143TEF |
|---|---|---|---|
| 描述 | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor | Small Signal Bipolar Transistor |
| 是否Rohs认证 | 符合 | 符合 | 符合 |
| 厂商名称 | Nexperia | Nexperia | Nexperia |
| 包装说明 | SMALL OUTLINE, R-PDSO-F3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-F3 |
| Reach Compliance Code | compliant | compliant | compliant |
| 其他特性 | BUILT-IN BIAS RESISTORS | BUILT-IN BIAS RESISTORS | BUILT-IN BIAS RESISTORS |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 50 V | 50 V | 50 V |
| 配置 | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR | SINGLE WITH BUILT-IN RESISTOR |
| 最小直流电流增益 (hFE) | 200 | 200 | 200 |
| JESD-30 代码 | R-PDSO-F3 | R-PDSO-G3 | R-PDSO-F3 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | 260 | NOT SPECIFIED |
| 极性/信道类型 | PNP | PNP | PNP |
| 表面贴装 | YES | YES | YES |
| 端子形式 | FLAT | GULL WING | FLAT |
| 端子位置 | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 30 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| JESD-609代码 | - | e3 | e3 |
| 端子面层 | - | Tin (Sn) | TIN |
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