器件名 |
厂商 |
描 述 |
功能 |
MJE800 |
SAVANTIC |
4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
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MJE800 |
ISC |
4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
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MJE800 |
Motorola ( NXP ) |
4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
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MJE800 |
Fairchild |
4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
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|
MJE800 |
Central Semiconductor |
4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
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|
MJE800 |
New Jersey Semiconductor |
4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
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|
MJE800 |
ON Semiconductor(安森美) |
Darlington Transistors 4A 60V Bipolar |
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MJE800 |
NXP(恩智浦) |
TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,4A I(C),TO-126 |
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MJE800 |
Inchange Semiconductor |
Bipolar Transistors;NPN;4A;60V;TO-126 |
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MJE800 |
Rochester Electronics |
4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225, PLASTIC, CASE 77-09, 3 PIN |
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MJE800 |
Advanced Semiconductor, Inc. |
Power Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN |
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MJE800 |
Crimson Semiconductor Inc |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, |
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MJE800 |
ST(意法半导体) |
4A, 60V, NPN, Si, POWER TRANSISTOR, TO-126 |
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MJE800G |
ON Semiconductor(安森美) |
额定功率:40W 集电极电流Ic:4A 集射极击穿电压Vce:60V 晶体管类型:NPN - Darlington |
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MJE800G |
Rochester Electronics |
4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225, LEAD FREE, PLASTIC, CASE 77-09, 3 PIN |
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MJE800LEADFREE |
Central Semiconductor |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, |
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|
MJE800STU |
Fairchild |
Darlington Transistors NPN Si Transistor Epitaxial Darlington |
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|
MJE800STU |
ON Semiconductor(安森美) |
TRANS NPN DARL 60V 4A TO126 |
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|
MJE800STU |
Rochester Electronics |
4A, 60V, NPN, Si, POWER TRANSISTOR, TO-126 |
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|
MJE800T |
ON Semiconductor(安森美) |
4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
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|
MJE800T |
MOSPEC |
POWER TRANSISTOR |
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|
MJE800T |
ISC |
isc Silicon NPN Darlington Power Transistor |
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|
MJE800T |
New Jersey Semiconductor |
4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 |
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|
MJE800T |
Motorola ( NXP ) |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin |
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|
MJE800T |
Central Semiconductor |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN |
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MJE800T |
Inchange Semiconductor |
Transistor |
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|
MJE800T16 |
Motorola ( NXP ) |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin |
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|
MJE800T16A |
Motorola ( NXP ) |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin |
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MJE800TA |
Motorola ( NXP ) |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin |
下载
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MJE800TAF |
Motorola ( NXP ) |
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin |
下载
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