电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索
Datasheet >

MJE800

eeworld网站中关于MJE800有43个元器件。有MJE800、MJE800等。可以通过横向对比他们之间的异同,来寻找器件间替代的可能。
器件名 厂商 描 述 功能
MJE800 SAVANTIC 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 下载
MJE800 ISC 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 下载
MJE800 Motorola ( NXP ) 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 下载
MJE800 Fairchild 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 下载
MJE800 Central Semiconductor 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 下载
MJE800 New Jersey Semiconductor 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 下载
MJE800 ON Semiconductor(安森美) Darlington Transistors 4A 60V Bipolar 下载
MJE800 NXP(恩智浦) TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,4A I(C),TO-126 下载
MJE800 Inchange Semiconductor Bipolar Transistors;NPN;4A;60V;TO-126 下载
MJE800 Rochester Electronics 4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225, PLASTIC, CASE 77-09, 3 PIN 下载
MJE800 Advanced Semiconductor, Inc. Power Bipolar Transistor, 4A I(C), 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN 下载
MJE800 Crimson Semiconductor Inc Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, 下载
MJE800 ST(意法半导体) 4A, 60V, NPN, Si, POWER TRANSISTOR, TO-126 下载
MJE800G ON Semiconductor(安森美) 额定功率:40W 集电极电流Ic:4A 集射极击穿电压Vce:60V 晶体管类型:NPN - Darlington 下载
MJE800G Rochester Electronics 4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225, LEAD FREE, PLASTIC, CASE 77-09, 3 PIN 下载
MJE800LEADFREE Central Semiconductor Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, 下载
MJE800STU Fairchild Darlington Transistors NPN Si Transistor Epitaxial Darlington 下载
MJE800STU ON Semiconductor(安森美) TRANS NPN DARL 60V 4A TO126 下载
MJE800STU Rochester Electronics 4A, 60V, NPN, Si, POWER TRANSISTOR, TO-126 下载
MJE800T ON Semiconductor(安森美) 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 下载
MJE800T MOSPEC POWER TRANSISTOR 下载
MJE800T ISC isc Silicon NPN Darlington Power Transistor 下载
MJE800T New Jersey Semiconductor 4 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-126 下载
MJE800T Motorola ( NXP ) Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin 下载
MJE800T Central Semiconductor Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN 下载
MJE800T Inchange Semiconductor Transistor 下载
MJE800T16 Motorola ( NXP ) Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin 下载
MJE800T16A Motorola ( NXP ) Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin 下载
MJE800TA Motorola ( NXP ) Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin 下载
MJE800TAF Motorola ( NXP ) Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin 下载
关于MJE800相关文档资料:
对应元器件 pdf文档资料下载
MJE800 、 MJE800T 下载文档
MJE800 、 MJE800G 下载文档
MJE800T 下载文档
MJE800STU 下载文档
MJE800STU 下载文档
MJE800T 下载文档
MJE800STU 下载文档
MJE800T 下载文档
MJE800TLEADFREE 下载文档
MJE800T 下载文档
MJE800资料比对:
型号 MJE800 MJE800G
描述 4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225, PLASTIC, CASE 77-09, 3 PIN 4A, 60V, NPN, Si, POWER TRANSISTOR, TO-225, LEAD FREE, PLASTIC, CASE 77-09, 3 PIN
是否无铅 不含铅 含铅
厂商名称 Rochester Electronics Rochester Electronics
零件包装代码 TO-225 TO-225
包装说明 PLASTIC, CASE 77-09, 3 PIN LEAD FREE, PLASTIC, CASE 77-09, 3 PIN
针数 3 3
制造商包装代码 CASE 77-09 CASE 77-09
Reach Compliance Code unknown unknown
其他特性 BUILT IN BIAS RESISTOR BUILT IN BIAS RESISTOR
最大集电极电流 (IC) 4 A 4 A
集电极-发射极最大电压 60 V 60 V
配置 DARLINGTON WITH BUILT-IN DIODE AND RESISTOR DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE) 750 750
JEDEC-95代码 TO-225 TO-225
JESD-30 代码 R-PSFM-T3 R-PSFM-T3
JESD-609代码 e0 e3
湿度敏感等级 NOT SPECIFIED NOT SPECIFIED
元件数量 1 1
端子数量 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) 240 260
极性/信道类型 NPN NPN
认证状态 COMMERCIAL COMMERCIAL
表面贴装 NO NO
端子面层 TIN LEAD MATTE TIN
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 30 40
晶体管应用 AMPLIFIER AMPLIFIER
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 1 MHz 1 MHz
小广播

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 国产芯 大学堂 TI培训 Datasheet 电子工程

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
搜索索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
器件入口   18 2Q 3G 4S 5O 67 9S CG D1 ER S6 VJ VL XI Y0

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved