| 器件名 |
厂商 |
描 述 |
功能 |
| IRFU210 |
Vishay(威世) |
MOSFET N-Chan 200V 2.6 Amp |
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| IRFU210 |
International Rectifier ( Infineon ) |
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=2.6A) |
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| IRFU210 |
Kersemi Electronic |
2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
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| IRFU210 |
SAMSUNG(三星) |
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 |
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| IRFU210A |
SAMSUNG(三星) |
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 |
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| IRFU210A |
Fairchild |
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3 |
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| IRFU210B |
Fairchild |
200V N-Channel MOSFET |
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| IRFU210BTLTU_FP001 |
Fairchild |
Power Field-Effect Transistor, 2.7A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, IPAK-3 |
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| IRFU210BTLTU_FP001 |
ON Semiconductor(安森美) |
MOSFET 200V N-Ch B-FET |
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| IRFU210BTU |
Fairchild |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
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| IRFU210BTU_FP001 |
Fairchild |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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| IRFU210PBF |
International Rectifier ( Infineon ) |
2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
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| IRFU210PBF |
Vishay(威世) |
漏源电压(Vdss):200V 连续漏极电流(Id)(25°C 时):2.6A 栅源极阈值电压:4V @ 250uA 漏源导通电阻:1.5Ω @ 1.6A,10V 最大功率耗散(Ta=25°C):2.5W 类型:N沟道 |
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| IRFU210PBF |
Kersemi Electronic |
2.6 A, 200 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
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