| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| IRFIZ48G | 深圳杜因特(DOINGTER) | N-Channel MOSFET uses advanced trench technology | 下载 |
| IRFIZ48G | ISC | iscN-Channel MOSFET Transistor | 下载 |
| IRFIZ48G | International Rectifier （ Infineon ） | 37 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | 下载 |
| IRFIZ48G | Vishay(威世) | MOSFET N-Chan 60V 37 Amp | 下载 |
| IRFIZ48G-002 | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-002PBF | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-003 | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-003PBF | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-004 | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-004PBF | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-005 | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-005PBF | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-006 | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-006PBF | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-009 | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-009PBF | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-010 | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-010PBF | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-011 | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-011PBF | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-012 | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-012PBF | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-013 | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-013PBF | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-015 | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-015PBF | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-017 | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-017PBF | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-018 | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
| IRFIZ48G-018PBF | International Rectifier （ Infineon ） | Power Field-Effect Transistor, 37A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | 下载 |
37 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | International Rectifier （ Infineon ） |
| 零件包装代码 | TO-220AB |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| 针数 | 3 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 雪崩能效等级（Eas） | 100 mJ |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 60 V |
| 最大漏极电流 (Abs) (ID) | 37 A |
| 最大漏极电流 (ID) | 37 A |
| 最大漏源导通电阻 | 0.018 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 50 W |
| 最大功率耗散 (Abs) | 50 W |
| 最大脉冲漏极电流 (IDM) | 150 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
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