| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| IRF720STRL | Vishay(威世) | MOSFET N-CH 400V 3.3A D2PAK | 下载 |
| IRF720STRL | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, SMD-220, 3 PIN | 下载 |
| IRF720STRLPBF | Vishay(威世) | MOSFET N-Chan 400V 3.3 Amp | 下载 |
| IRF720STRLPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | 下载 |
| IRF720STRR | International Rectifier ( Infineon ) | hexfet | 下载 |
| IRF720STRR | Vishay(威世) | mosfet N-CH 400v 3.3A d2pak | 下载 |
| IRF720STRRPBF | Vishay(威世) | MOSFET N-Chan 400V 3.3 Amp | 下载 |
| IRF720STRRPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | 下载 |
| IRF720STRRPBFA | Vishay(威世) | Power MOSFET | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| IRF720STRL 、 IRF720STRR | 下载文档 |
| IRF720STRLPBF 、 IRF720STRRPBF | 下载文档 |
| IRF720STRRPBF | 下载文档 |
| IRF720STRR | 下载文档 |
| IRF720STRLPBF | 下载文档 |
| IRF720STRL | 下载文档 |
| 型号 | IRF720STRLPBF | IRF720STRRPBF |
|---|---|---|
| 描述 | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3 |
| 是否无铅 | 不含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 |
| 厂商名称 | International Rectifier ( Infineon ) | International Rectifier ( Infineon ) |
| 包装说明 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| 针数 | 3 | 3 |
| Reach Compliance Code | compliant | compliant |
| 其他特性 | AVALANCHE RATED | AVALANCHE RATED |
| 雪崩能效等级(Eas) | 190 mJ | 190 mJ |
| 外壳连接 | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 400 V | 400 V |
| 最大漏极电流 (ID) | 3.3 A | 3.3 A |
| 最大漏源导通电阻 | 1.8 Ω | 1.8 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609代码 | e3 | e3 |
| 湿度敏感等级 | 1 | 1 |
| 元件数量 | 1 | 1 |
| 端子数量 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | 260 | 260 |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 13 A | 13 A |
| 认证状态 | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES |
| 端子面层 | MATTE TIN OVER NICKEL | MATTE TIN OVER NICKEL |
| 端子形式 | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE |
| 处于峰值回流温度下的最长时间 | 30 | 30 |
| 晶体管应用 | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON |
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