| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| IRF5N4905 | Infineon(英飞凌) | Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | 下载 |
| IRF5N4905 | International Rectifier ( Infineon ) | 55 A, 55 V, 0.024 ohm, P-CHANNEL, Si, POWER, MOSFET | 下载 |
| IRF5N4905_15 | International Rectifier ( Infineon ) | Avalanche Energy Ratings | 下载 |
| IRF5N4905PBF | Infineon(英飞凌) | Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | 下载 |
| IRF5N4905PBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| IRF5N4905 、 IRF5N4905 、 IRF5N4905PBF 、 IRF5N4905PBF | 下载文档 |
| IRF5N4905_15 | 下载文档 |
| 型号 | IRF5N4905PBF | IRF5N4905 | IRF5N4905 | IRF5N4905PBF |
|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | 55 A, 55 V, 0.024 ohm, P-CHANNEL, Si, POWER, MOSFET | Power Field-Effect Transistor, 55A I(D), 55V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN |
| 包装说明 | CHIP CARRIER, R-CBCC-N3 | HERMETIC SEALED, SMD-1, 3 PIN | CHIP CARRIER, R-CBCC-N3 | CHIP CARRIER, R-CBCC-N3 |
| Reach Compliance Code | compliant | unknown | unknown | compliant |
| 雪崩能效等级(Eas) | 330 mJ | 330 mJ | 330 mJ | 330 mJ |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 55 V | 55 V | 55 V | 55 V |
| 最大漏极电流 (ID) | 55 A | 55 A | 55 A | 55 A |
| 最大漏源导通电阻 | 0.024 Ω | 0.024 Ω | 0.024 Ω | 0.024 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 | R-CBCC-N3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
| 峰值回流温度(摄氏度) | 260 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 220 A | 220 A | 220 A | 220 A |
| 表面贴装 | YES | YES | YES | YES |
| 端子形式 | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 40 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | 1 | 1 |
| 是否Rohs认证 | 符合 | 不符合 | - | 符合 |
| 厂商名称 | International Rectifier ( Infineon ) | Infineon(英飞凌) | International Rectifier ( Infineon ) | - |
| ECCN代码 | EAR99 | EAR99 | EAR99 | - |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | - |
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