| 型号 |
IRF1010EZL |
IRF1010EZLPBF |
| 描述 |
75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
75 A, 60 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 是否Rohs认证 |
不符合 |
符合 |
| 零件包装代码 |
TO-262AA |
TO-262AA |
| 包装说明 |
IN-LINE, R-PSIP-T3 |
LEAD FREE, PLASTIC, TO-262, 3 PIN |
| 针数 |
3 |
3 |
| Reach Compliance Code |
compli |
_compli |
| ECCN代码 |
EAR99 |
EAR99 |
| 其他特性 |
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE |
AVALANCHE RATED, ULTRA LOW RESISTANCE |
| 雪崩能效等级(Eas) |
99 mJ |
99 mJ |
| 外壳连接 |
DRAIN |
DRAIN |
| 配置 |
SINGLE WITH BUILT-IN DIODE |
SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 |
60 V |
60 V |
| 最大漏极电流 (Abs) (ID) |
75 A |
75 A |
| 最大漏极电流 (ID) |
75 A |
75 A |
| 最大漏源导通电阻 |
0.0085 Ω |
0.0085 Ω |
| FET 技术 |
METAL-OXIDE SEMICONDUCTOR |
METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 |
TO-262AA |
TO-262AA |
| JESD-30 代码 |
R-PSIP-T3 |
R-PSIP-T3 |
| JESD-609代码 |
e0 |
e3 |
| 元件数量 |
1 |
1 |
| 端子数量 |
3 |
3 |
| 工作模式 |
ENHANCEMENT MODE |
ENHANCEMENT MODE |
| 最高工作温度 |
175 °C |
175 °C |
| 封装主体材料 |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| 封装形状 |
RECTANGULAR |
RECTANGULAR |
| 封装形式 |
IN-LINE |
IN-LINE |
| 峰值回流温度(摄氏度) |
225 |
260 |
| 极性/信道类型 |
N-CHANNEL |
N-CHANNEL |
| 最大功率耗散 (Abs) |
140 W |
140 W |
| 最大脉冲漏极电流 (IDM) |
340 A |
340 A |
| 认证状态 |
Not Qualified |
Not Qualified |
| 表面贴装 |
NO |
NO |
| 端子面层 |
Tin/Lead (Sn/Pb) |
Matte Tin (Sn) - with Nickel (Ni) barrie |
| 端子形式 |
THROUGH-HOLE |
THROUGH-HOLE |
| 端子位置 |
SINGLE |
SINGLE |
| 处于峰值回流温度下的最长时间 |
30 |
30 |
| 晶体管应用 |
SWITCHING |
SWITCHING |
| 晶体管元件材料 |
SILICON |
SILICON |