| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| IPU135N03L-G | Infineon(英飞凌) | MOSFET N-Ch 30V 30A IPAK-3 | 下载 |
| IPU135N03L G | Infineon(英飞凌) | MOSFET N-CH 30V 30A TO-251-3 | 下载 |
| IPU135N03LG | Infineon(英飞凌) | OptiMOS3 Power-Transistor | 下载 |
| IPU135N03LGBKMA1 | Infineon(英飞凌) | Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, GREEN, PLASTIC, TO-251, 3 PIN | 下载 |
MOSFET N-Ch 30V 30A IPAK-3
| 参数名称 | 属性值 |
| 产品种类 Product Category | MOSFET |
| 制造商 Manufacturer | Infineon(英飞凌) |
| RoHS | Details |
| 技术 Technology | Si |
| 安装风格 Mounting Style | Through Hole |
| 封装 / 箱体 Package / Case | TO-251-3 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Id - Continuous Drain Current | 30 A |
| Rds On - Drain-Source Resistance | 20.5 mOhms |
| Vgs - Gate-Source Voltage | 20 V |
| 最小工作温度 Minimum Operating Temperature | - 55 C |
| 最大工作温度 Maximum Operating Temperature | + 175 C |
| Configuration | Single |
| Channel Mode | Enhancement |
| 系列 Packaging | Tube |
| Fall Time | 2 ns |
| Forward Transconductance - Min | 43 S |
| 高度 Height | 6.22 mm |
| 长度 Length | 6.73 mm |
| Pd-功率耗散 Pd - Power Dissipation | 31 W |
| Rise Time | 3 ns |
| 工厂包装数量 Factory Pack Quantity | 1500 |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 12 ns |
| Typical Turn-On Delay Time | 3 ns |
| 宽度 Width | 2.38 mm |
| 单位重量 Unit Weight | 0.139332 oz |
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