器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
IPDD60R125G7XTMA1 | Infineon(英飞凌) | MOSFET HIGH POWER_NEW | 下载 |
MOSFET HIGH POWER_NEW
参数名称 | 属性值 |
Product Attribute | Attribute Value |
制造商 Manufacturer | Infineon(英飞凌) |
产品种类 Product Category | MOSFET |
RoHS | Details |
安装风格 Mounting Style | SMD/SMT |
封装 / 箱体 Package / Case | PG-HDSOP-10 |
Number of Channels | 1 Channel |
Transistor Polarity | N-Channel |
Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 20 A |
Rds On - Drain-Source Resistance | 125 mOhms |
Vgs th - Gate-Source Threshold Voltage | 3 V |
Vgs - Gate-Source Voltage | 20 V |
Qg - Gate Charge | 27 nC |
最小工作温度 Minimum Operating Temperature | - 55 C |
最大工作温度 Maximum Operating Temperature | + 150 C |
Configuration | Single |
Pd-功率耗散 Pd - Power Dissipation | 120 W |
Channel Mode | Enhancement |
系列 Packaging | Cut Tape |
系列 Packaging | Reel |
Fall Time | 5 ns |
Rise Time | 5 ns |
工厂包装数量 Factory Pack Quantity | 1700 |
Typical Turn-Off Delay Time | 60 ns |
Typical Turn-On Delay Time | 18 ns |
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