| 器件名 |
厂商 |
描 述 |
功能 |
| C670 |
Powerbox |
4-BIT MAGNITUDE COMPARATOR |
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|
| C6700-1000 |
Hi-G Relays |
Off-Delay Relay, DPDT, Momentary, 31VDC (Coil), 2A (Contact), 28VDC (Contact), 0.1s, AC/DC Output, Panel Mount, |
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|
| C6700-3003 |
Hi-G Relays |
Off-Delay Relay, DPDT, Momentary, 31VDC (Coil), 2A (Contact), 28VDC (Contact), 300s, AC/DC Output, Panel Mount, |
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|
| C67040-A4207-A2 |
SIEMENS |
25 A, 1200 V, N-CHANNEL IGBT |
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|
| C67040-A4424-A2 |
SIEMENS |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated |
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|
| C670478-A3106-A2 |
SIEMENS |
main ratings |
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|
| C67047-A2066-A2 |
SIEMENS |
1000 V, SILICON, RECTIFIER DIODE, TO-218AD |
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| C67047-A2071-A2 |
SIEMENS |
1000 V, SILICON, RECTIFIER DIODE, TO-218AD |
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|
| C67047-A2072-A2 |
SIEMENS |
fred diode (fast recovery epitaxial diode soft recovery characteristics) |
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|
| C67047-A2206-A001 |
Infineon(英飞凌) |
50 A, 1200 V, SILICON, RECTIFIER DIODE |
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|
| C67047-A2250-A2 |
SIEMENS |
5 A, 1000 V, SILICON, RECTIFIER DIODE, TO-218AD |
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|
| C67047-A2251-A2 |
SIEMENS |
1200 V, SILICON, RECTIFIER DIODE, TO-218AD |
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| C67047-A2252-A2 |
SIEMENS |
1200 V, SILICON, RECTIFIER DIODE, TO-218AD |
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|
| C67047-A2253-A2 |
SIEMENS |
1200 V, SILICON, RECTIFIER DIODE, TO-218AD |
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|
| C67047-A2254-A2 |
SIEMENS |
5 A, 1000 V, SILICON, RECTIFIER DIODE, TO-218AD |
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|
| C67047-A4678-A001 |
Infineon(英飞凌) |
30 A, 600 V, SILICON, RECTIFIER DIODE |
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|
| C67047-A4679-A001 |
Infineon(英飞凌) |
75 A, 600 V, SILICON, RECTIFIER DIODE |
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|
| C67047-A4681-A003 |
Infineon(英飞凌) |
100 A, 600 V, SILICON, RECTIFIER DIODE |
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|
| C67047-A4687-A001 |
Infineon(英飞凌) |
150 A, 600 V, SILICON, RECTIFIER DIODE |
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|
| C67067-A1403-A2 |
SIEMENS |
main ratings |
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|
| C67067-A2900-A70 |
EUPEC [eupec GmbH] |
Rectifier Diode, 1 Phase, 1 Element, 450A, Silicon, |
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|
| C67070-A2006-A70 |
EUPEC [eupec GmbH] |
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel, |
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|
| C67070-A2007-A70 |
SIEMENS |
IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area) |
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|
| C67070-A2007-A70 |
EUPEC [eupec GmbH] |
Insulated Gate Bipolar Transistor, 430A I(C), 1200V V(BR)CES, N-Channel, |
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|
| C67070-A2017-A70 |
EUPEC [eupec GmbH] |
Insulated Gate Bipolar Transistor, 430A I(C), 1200V V(BR)CES, N-Channel, |
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|
| C67070-A2107-A70 |
SIEMENS |
145 A, 1200 V, N-CHANNEL IGBT |
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|
| C67070-A2107-A70 |
EUPEC [eupec GmbH] |
Insulated Gate Bipolar Transistor, 145A I(C), 1200V V(BR)CES, N-Channel, |
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|
| C67070-A2111-A70 |
SIEMENS |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Doubled diode area) |
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|
| C67070-A2111-A70 |
EUPEC [eupec GmbH] |
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, |
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|
| C67070-A2120-A67 |
SIEMENS |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) |
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