| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| BSS138-TP | MCC | 漏源电压(Vdss):50V 连续漏极电流(Id)(25°C 时):220mA 栅源极阈值电压:1.5V @ 1mA 漏源导通电阻:3.5Ω @ 220mA,10V 最大功率耗散(Ta=25°C):350mW 类型:N沟道 | 下载 |
| BSS138-TP | Micro Commercial Components (MCC) | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 下载 |
| BSS138-TP-HF | Micro Commercial Components (MCC) | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | 下载 |
| 型号 | BSS138-TP-HF | BSS138-TP |
|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Small Signal Field-Effect Transistor, 0.22A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, |
| 是否Rohs认证 | 符合 | 符合 |
| 厂商名称 | Micro Commercial Components (MCC) | Micro Commercial Components (MCC) |
| Reach Compliance Code | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 50 V | 50 V |
| 最大漏极电流 (ID) | 0.22 A | 0.22 A |
| 最大漏源导通电阻 | 6 Ω | 6 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 |
| 元件数量 | 1 | 1 |
| 端子数量 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度(摄氏度) | 260 | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 表面贴装 | YES | YES |
| 端子形式 | GULL WING | GULL WING |
| 端子位置 | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | 10 | NOT SPECIFIED |
| 晶体管元件材料 | SILICON | SILICON |
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