| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| BLF7G22L-100P | NXP(恩智浦) | 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-4 | 下载 |
| BLF7G22L-100P,112 | NXP(恩智浦) | Power LDMOS transistor | 下载 |
| BLF7G22L-100P112 | NXP(恩智浦) | RF MOSFET Transistors Pwr LDMOS transistor transistor | 下载 |
| BLF7G22L-100P118 | NXP(恩智浦) | RF MOSFET Transistors Pwr LDMOS transistor transistor | 下载 |
| BLF7G22L-100P,118 | NXP(恩智浦) | Power LDMOS transistor | 下载 |
| BLF7G22L-130 | NXP(恩智浦) | RF MOSFET Transistors 44.8dBm 2110-2170MHz | 下载 |
| BLF7G22L-130112 | NXP(恩智浦) | RF MOSFET Transistors TRANSISTOR PWR LDMOS | 下载 |
| BLF7G22L-130,112 | NXP(恩智浦) | Power LDMOS transistor | 下载 |
| BLF7G22L-130,118 | NXP(恩智浦) | RF MOSFET Transistors TRANSISTOR PWR LDMOS | 下载 |
| BLF7G22L-130,118 | 安谱隆(Ampleon) | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | 下载 |
| BLF7G22L-130,118 | Amphenol(安费诺) | RF FET LDMOS 65V 18.5DB SOT502A | 下载 |
| BLF7G22L-130_15 | NXP(恩智浦) | Power LDMOS transistor | 下载 |
| BLF7G22L-130_15 | Philips Semiconductors (NXP Semiconductors N.V.) | Power LDMOS transistor | 下载 |
| BLF7G22L-130N | NXP(恩智浦) | Power LDMOS transistor | 下载 |
| BLF7G22L-160 | NXP(恩智浦) | SILICON, VHF BAND, MIXER DIODE | 下载 |
| BLF7G22L-160112 | NXP(恩智浦) | RF MOSFET Transistors Power LDMOS transistor | 下载 |
| BLF7G22L-160,112 | Amphenol(安费诺) | RF FET LDMOS 65V 18DB SOT502A | 下载 |
| BLF7G22L-160,112 | NXP(恩智浦) | TRANS LDMOS SOT502B | 下载 |
| BLF7G22L-160,118 | Amphenol(安费诺) | RF FET LDMOS 65V 18DB SOT502A | 下载 |
| BLF7G22L-160,118 | NXP(恩智浦) | RF MOSFET Transistors Power LDMOS transistor | 下载 |
| BLF7G22L-160_15 | NXP(恩智浦) | Power LDMOS transistor | 下载 |
| BLF7G22L-160_15 | Philips Semiconductors (NXP Semiconductors N.V.) | Power LDMOS transistor | 下载 |
| BLF7G22L-160B112 | NXP(恩智浦) | RF MOSFET Transistors BLF7G22L-160B/ACC-6L/TUBE-BULK | 下载 |
| BLF7G22L-160B,118 | NXP(恩智浦) | RF MOSFET Transistors BLF7G22L-160B/ACC-6L/REEL13// | 下载 |
| BLF7G22L-200 | NXP(恩智浦) | SILICON, VHF BAND, MIXER DIODE | 下载 |
| BLF7G22L-200,112 | NXP(恩智浦) | RF MOSFET Transistors Single 65V | 下载 |
| BLF7G22L-200,118 | Amphenol(安费诺) | RF FET LDMOS 65V 18.5DB SOT502A | 下载 |
| BLF7G22L-200,118 | NXP(恩智浦) | RF MOSFET Transistors Single 65V | 下载 |
| BLF7G22L-200,118 | 安谱隆(Ampleon) | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | 下载 |
| BLF7G22L-200_15 | NXP(恩智浦) | Power LDMOS transistor | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| BLF7G22L-160B,118 、 BLF7G22L-160B112 、 BLF7G22LS-160,112 、 BLF7G22LS-160B,112 、 BLF7G22LS-160B,118 | 下载文档 |
| BLF7G22L-160 、 BLF7G22L-200 、 BLF7G22L-250P 、 BLF7G22LS-160 、 BLF7G22LS-200 | 下载文档 |
| BLF7G22L-250PB 、 BLF7G22LS-250PB 、 BLF7G22LS-250PB 、 BLF7G22LS-250PB,11 | 下载文档 |
| BLF7G22L-250P,112 、 BLF7G22LS-250P,112 、 BLF7G22LS-250P,118 | 下载文档 |
| BLF7G22L-100P,112 、 BLF7G22L-100P,118 、 BLF7G22LS-100P,112 | 下载文档 |
| BLF7G22L-250PB,112 、 BLF7G22L-250PB,118 、 BLF7G22LS-250PB,11 | 下载文档 |
| BLF7G22L-160,112 、 BLF7G22LS-160,112 、 BLF7G22LS-160,118 | 下载文档 |
| BLF7G22L-130,118 、 BLF7G22LS-130,112 、 BLF7G22LS-130118 | 下载文档 |
| BLF7G22L-200,118 、 BLF7G22LS-200,112 、 BLF7G22LS-200,118 | 下载文档 |
| BLF7G22L-160,118 、 BLF7G22LS-160118 | 下载文档 |
| 型号 | BLF7G22L-160 | BLF7G22L-200 | BLF7G22L-250P | BLF7G22LS-160 | BLF7G22LS-200 |
|---|---|---|---|---|---|
| 描述 | SILICON, VHF BAND, MIXER DIODE | SILICON, VHF BAND, MIXER DIODE | SILICON, VHF BAND, MIXER DIODE | SILICON, VHF BAND, MIXER DIODE | SILICON, VHF BAND, MIXER DIODE |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 包装说明 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F4 | FLATPACK, R-CDFP-F2 | FLATPACK, R-CDFP-F2 |
| 针数 | 2 | 2 | 4 | 2 | 2 |
| Reach Compliance Code | unknown | unknown | unknow | unknow | unknow |
| 外壳连接 | SOURCE | SOURCE | SOURCE | SOURCE | SOURCE |
| 配置 | SINGLE | SINGLE | COMMON SOURCE, 2 ELEMENTS | SINGLE | SINGLE |
| 最小漏源击穿电压 | 65 V | 65 V | 65 V | 65 V | 65 V |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-CDFM-F2 | R-CDFM-F2 | R-CDFM-F4 | R-CDFP-F2 | R-CDFP-F2 |
| 元件数量 | 1 | 1 | 2 | 1 | 1 |
| 端子数量 | 2 | 2 | 4 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLATPACK | FLATPACK |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | NXP(恩智浦) | NXP(恩智浦) | NXP(恩智浦) | - | - |
| ECCN代码 | EAR99 | EAR99 | - | EAR99 | EAR99 |
| 最高频带 | S BAND | S BAND | - | S BAND | S BAND |
| Base Number Matches | 1 | 1 | - | 1 | 1 |
| 最高工作温度 | - | 200 °C | 200 °C | - | 200 °C |
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