| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| BLF6G38-50 | NXP(恩智浦) | S BAND, Si, N-CHANNEL, RF POWER, MOSFET | 下载 |
| BLF6G38-50_10 | NXP(恩智浦) | WiMAX power LDMOS transistor | 下载 |
| BLF6G38-50112 | NXP(恩智浦) | RF MOSFET Transistors LDMOS TNS | 下载 |
| BLF6G38-50,112 | NXP(恩智浦) | S BAND, Si, N-CHANNEL, RF POWER, MOSFET | 下载 |
| BLF6G38-50,112 | 安谱隆(Ampleon) | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | 下载 |
| BLF6G38-50135 | NXP(恩智浦) | RF MOSFET Transistors TRANS WIMAX PWR LDMOS | 下载 |
| BLF6G38-50,135 | NXP(恩智浦) | S BAND, Si, N-CHANNEL, RF POWER, MOSFET | 下载 |
| BLF6G38-50,135 | 安谱隆(Ampleon) | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | 下载 |
| BLF6G38-50_15 | NXP(恩智浦) | WiMAX power LDMOS transistor | 下载 |
| BLF6G38-50_15 | Philips Semiconductors (NXP Semiconductors N.V.) | WiMAX power LDMOS transistor | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| BLF6G38-50112 、 BLF6G38-50135 | 下载文档 |
| BLF6G38-50,112 、 BLF6G38-50,135 | 下载文档 |
| BLF6G38-50,112 、 BLF6G38-50,135 | 下载文档 |
| BLF6G38-50_15 | 下载文档 |
| BLF6G38-50_10 | 下载文档 |
| BLF6G38-50 | 下载文档 |
| 型号 | BLF6G38-50,112 | BLF6G38-50,135 |
|---|---|---|
| 描述 | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 | RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-2 |
| 是否Rohs认证 | 符合 | 符合 |
| 厂商名称 | 安谱隆(Ampleon) | 安谱隆(Ampleon) |
| 包装说明 | FLANGE MOUNT, R-CDFM-F2 | FLANGE MOUNT, R-CDFM-F2 |
| Reach Compliance Code | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 |
| 外壳连接 | SOURCE | SOURCE |
| 配置 | SINGLE | SINGLE |
| 最小漏源击穿电压 | 65 V | 65 V |
| 最大漏极电流 (ID) | 16.5 A | 16.5 A |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| 最高频带 | S BAND | S BAND |
| JESD-30 代码 | R-CDFM-F2 | R-CDFM-F2 |
| 元件数量 | 1 | 1 |
| 端子数量 | 2 | 2 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL |
| 参考标准 | IEC-60134 | IEC-60134 |
| 表面贴装 | YES | YES |
| 端子形式 | FLAT | FLAT |
| 端子位置 | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON |
| Base Number Matches | 1 | 1 |
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