| 型号 |
AM49DL640BG70IT |
AM49DL640BG70IS |
| 描述 |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (512 K x 16-Bit) Pseudo Static RAM |
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (512 K x 16-Bit) Pseudo Static RAM |
| 是否Rohs认证 |
不符合 |
不符合 |
| 零件包装代码 |
BGA |
BGA |
| 包装说明 |
LFBGA, BGA73,10X12,32 |
LFBGA, BGA73,10X12,32 |
| 针数 |
73 |
73 |
| Reach Compliance Code |
compli |
compli |
| 最长访问时间 |
70 ns |
70 ns |
| 其他特性 |
SRAM IS ORGANISED AS 2M X 16 |
SRAM IS ORGANISED AS 2M X 16 |
| JESD-30 代码 |
R-PBGA-B73 |
R-PBGA-B73 |
| JESD-609代码 |
e0 |
e0 |
| 长度 |
11.6 mm |
11.6 mm |
| 内存密度 |
67108864 bi |
67108864 bi |
| 内存集成电路类型 |
MEMORY CIRCUIT |
MEMORY CIRCUIT |
| 内存宽度 |
16 |
16 |
| 混合内存类型 |
FLASH+PSRAM |
FLASH+PSRAM |
| 功能数量 |
1 |
1 |
| 端子数量 |
73 |
73 |
| 字数 |
4194304 words |
4194304 words |
| 字数代码 |
4000000 |
4000000 |
| 工作模式 |
ASYNCHRONOUS |
ASYNCHRONOUS |
| 最高工作温度 |
85 °C |
85 °C |
| 最低工作温度 |
-40 °C |
-40 °C |
| 组织 |
4MX16 |
4MX16 |
| 封装主体材料 |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
| 封装代码 |
LFBGA |
LFBGA |
| 封装等效代码 |
BGA73,10X12,32 |
BGA73,10X12,32 |
| 封装形状 |
RECTANGULAR |
RECTANGULAR |
| 封装形式 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
GRID ARRAY, LOW PROFILE, FINE PITCH |
| 电源 |
3 V |
3 V |
| 认证状态 |
Not Qualified |
Not Qualified |
| 座面最大高度 |
1.4 mm |
1.4 mm |
| 最大待机电流 |
0.000005 A |
0.000005 A |
| 最大压摆率 |
0.045 mA |
0.045 mA |
| 最大供电电压 (Vsup) |
3.3 V |
3.3 V |
| 最小供电电压 (Vsup) |
2.7 V |
2.7 V |
| 标称供电电压 (Vsup) |
3 V |
3 V |
| 表面贴装 |
YES |
YES |
| 技术 |
CMOS |
CMOS |
| 温度等级 |
INDUSTRIAL |
INDUSTRIAL |
| 端子面层 |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
| 端子形式 |
BALL |
BALL |
| 端子节距 |
0.8 mm |
0.8 mm |
| 端子位置 |
BOTTOM |
BOTTOM |
| 宽度 |
8 mm |
8 mm |