| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| 2SK410 | Hitachi (Renesas ) | Silicon N-Channel MOS FET (HF/VHF power amplifier) | 下载 |
| 2SK410 | Advanced Semiconductor, Inc. | RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.500 INCH, ROHS COMPLIANT, FM-4 | 下载 |
| 2SK410 | ASI [ASI Semiconductor, Inc] | SILICON N-CHANNEL MOS FET | 下载 |
| 2SK4100LS | ON Semiconductor(安森美) | TRANSISTOR,MOSFET,N-CHANNEL,650V V(BR)DSS,6A I(D),TO-220AB(FP) | 下载 |
| 2SK4100LS | SANYO | Power Field-Effect Transistor, 6A I(D), 650V, 1.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | 下载 |
| 2SK4100LS | ISC | isc N-Channel MOSFET Transistor | 下载 |
| 2SK4101 | 台湾微碧(VBsemi) | N-Channel 650V (D-S) Super Junction Power MOSFET | 下载 |
| 2SK4101FG | ON Semiconductor(安森美) | TRANSISTOR,MOSFET,N-CHANNEL,650V V(BR)DSS,6.4A I(D),TO-220AB(FP) | 下载 |
| 2SK4101FG | SANYO | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN | 下载 |
| 2SK4101FS | ON Semiconductor(安森美) | 6.4A, 650V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220F-3FS, 3 PIN | 下载 |
| 2SK4101FS | SANYO | Power Field-Effect Transistor, 6.4A I(D), 650V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F-3FS, 3 PIN | 下载 |
| 2SK4101LS | ON Semiconductor(安森美) | POWER, FET | 下载 |
| 2SK4101LS | SANYO | Power Field-Effect Transistor, 7A I(D), 650V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FI(LS), 3 PIN | 下载 |
| 2SK4101LS | ISC | isc N-Channel MOSFET Transistor | 下载 |
| 2SK4103 | Toshiba(东芝) | TRANSISTOR 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, PW-MOLD PACKAGE-3, FET General Purpose Power | 下载 |
| 2SK4104 | Toshiba(东芝) | TRANSISTOR 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, 3 PIN, FET General Purpose Power | 下载 |
| 2SK4105 | Toshiba(东芝) | TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, FET General Purpose Power | 下载 |
| 2SK4106 | Toshiba(东芝) | TRANSISTOR 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220NIS, FET General Purpose Power | 下载 |
| 2SK4107 | Toshiba(东芝) | Switching Regulator Applications | 下载 |
| 2SK4107 | Nell | N-Channel Power MOSFET | 下载 |
| 2SK4107 | Thinki Semiconductor Co.,Ltd. | THINKISEMI 15A,500V N-CHANNEL PLANAR STRIPE POWER MOSFETs | 下载 |
| 2SK4107_09 | Toshiba(东芝) | Switching Regulator Applications | 下载 |
| 2SK4107(F) | Toshiba(东芝) | 2SK4107(F) | 下载 |
| 2SK4107(F,T) | Toshiba(东芝) | MOSFET MOSFET N-Ch, 500V, 15A | 下载 |
| 2SK4108 | Toshiba(东芝) | Silicon N-Channel MOS Type Switching Regulator Applications | 下载 |
| 2SK4108 | Thinki Semiconductor Co.,Ltd. | THINKISEMI 20A,500V N-CHANNEL PLANAR STRIPE POWER MOSFETs | 下载 |
| 2SK4108 | ISC | isc N-Channel MOSFET Transistor | 下载 |
TRANSISTOR 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, PW-MOLD PACKAGE-3, FET General Purpose Power
| 参数名称 | 属性值 |
| 包装说明 | , |
| 针数 | 3 |
| Reach Compliance Code | unknow |
| 最小漏源击穿电压 | 500 V |
| 最大漏极电流 (ID) | 5 A |
| 最大漏源导通电阻 | 1.5 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved