器件名 | 厂商 | 描 述 | 功能 |
---|---|---|---|
2SC3053 | Mitsubishi(日本三菱) | Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, NPN, Silicon, SC-59, 3 PIN | 下载 |
2SC3053 | Isahaya | for high frequency amplify, medium frequency amplify application silicon npn epitaxial type | 下载 |
2SC3053_10 | Isahaya | FOR HIGH FREQUENCY AMPLIFY, MEDIUM FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE | 下载 |
2SC3053-12-1B | Mitsubishi(日本三菱) | Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | 下载 |
2SC3053-12-1C | Mitsubishi(日本三菱) | Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | 下载 |
2SC3053-12-1D | Mitsubishi(日本三菱) | Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | 下载 |
2SC3053B | Isahaya | Transistor | 下载 |
2SC3053C | Isahaya | Transistor | 下载 |
2SC3053D | Isahaya | Transistor | 下载 |
2SC3053-T12-1B | Mitsubishi(日本三菱) | Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | 下载 |
2SC3053-T12-1C | Mitsubishi(日本三菱) | Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | 下载 |
2SC3053-T12-1D | Mitsubishi(日本三菱) | Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | 下载 |
对应元器件 | pdf文档资料下载 |
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2SC3053-12-1B 、 2SC3053-12-1C 、 2SC3053-12-1D 、 2SC3053-T12-1B 、 2SC3053-T12-1C 、 2SC3053-T12-1D | 下载文档 |
2SC3053B 、 2SC3053C 、 2SC3053D | 下载文档 |
2SC3053_10 | 下载文档 |
2SC3053 | 下载文档 |
2SC3053 | 下载文档 |
型号 | 2SC3053-T12-1D | 2SC3053-12-1B | 2SC3053-12-1C | 2SC3053-12-1D | 2SC3053-T12-1B | 2SC3053-T12-1C |
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描述 | Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 | Small Signal Bipolar Transistor, 0.03A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 |
包装说明 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A | 0.03 A |
集电极-发射极最大电压 | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 90 | 35 | 55 | 90 | 35 | 55 |
JEDEC-95代码 | TO-236 | TO-236 | TO-236 | TO-236 | TO-236 | TO-236 |
JESD-30 代码 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
极性/信道类型 | NPN | NPN | NPN | NPN | NPN | NPN |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | YES | YES | YES | YES | YES | YES |
端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz | 200 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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