| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| 2SD1827 | SANYO | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220ML, 3 PIN | 下载 |
| 2SD1827 | SAVANTIC | Silicon NPN Power Transistors | 下载 |
| 2SD1827 | ON Semiconductor(安森美) | 10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220ML, 3 PIN | 下载 |
| 2SD1827 | Inchange Semiconductor | Transistor | 下载 |
| 2SD1827 | ISC | Silicon NPN Power Transistors | 下载 |
| 2SD1827-RA | SANYO | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | 下载 |
| 2SD1827-RB | SANYO | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | 下载 |
| 2SD1827-YA | SANYO | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | 下载 |
| 2SD1827-YB | SANYO | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| 2SD1827-RA 、 2SD1827-RB 、 2SD1827-YA 、 2SD1827-YB | 下载文档 |
| 2SD1827 | 下载文档 |
| 2SD1827 | 下载文档 |
| 2SD1827 | 下载文档 |
| 2SD1827 | 下载文档 |
| 2SD1827 | 下载文档 |
| 型号 | 2SD1827-YB | 2SD1827-RA | 2SD1827-RB | 2SD1827-YA |
|---|---|---|---|---|
| 描述 | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin | Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknow | unknow | unknow | unknow |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 其他特性 | BUILT IN BIAS RESISTOR RATIO IS 0.03 | BUILT IN BIAS RESISTOR RATIO IS 0.03 | BUILT IN BIAS RESISTOR RATIO IS 0.03 | BUILT IN BIAS RESISTOR RATIO IS 0.03 |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 最大集电极电流 (IC) | 10 A | 10 A | 10 A | 10 A |
| 集电极-发射极最大电压 | 60 V | 60 V | 60 V | 60 V |
| 配置 | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| 最小直流电流增益 (hFE) | 2000 | 2000 | 2000 | 2000 |
| JESD-30 代码 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | NPN | NPN | NPN | NPN |
| 功耗环境最大值 | 30 W | 30 W | 30 W | 30 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 20 MHz | 20 MHz | 20 MHz | 20 MHz |
| VCEsat-Max | 1.5 V | 1.5 V | 1.5 V | 1.5 V |
| Base Number Matches | 1 | 1 | 1 | 1 |
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