| 器件名 | 厂商 | 描 述 | 功能 |
|---|---|---|---|
| 2N7228 | Microsemi | MOSFET N Channel MOSFET | 下载 |
| 2N7228 | ADPOW | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | 下载 |
| 2N7228 | SEME-LAB | N鈥揅HANNEL POWER MOSFET | 下载 |
| 2N7228 | SENSITRON | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | 下载 |
| 2N7228 | All Sensors | Na??channel power mosfet | 下载 |
| 2N7228 | SEMELAB | 12A, 500V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | 下载 |
| 2N7228 | TT Electronics plc | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | 下载 |
| 2N7228 | Omnirel Corp | Power Field-Effect Transistor, 8A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN | 下载 |
| 2N7228 | TEMIC | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | 下载 |
| 2N7228_10 | Microsemi | N-CHANNEL MOSFET | 下载 |
| 2N72281N6036 | Microsemi | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | 下载 |
| 2N72281N6036A | Microsemi | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | 下载 |
| 2N72281N6036AE3 | Microsemi | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | 下载 |
| 2N72281N6036E3 | Microsemi | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | 下载 |
| 2N72281N6072 | Microsemi | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | 下载 |
| 2N72281N6072A | Microsemi | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | 下载 |
| 2N72281N6072AE3 | Microsemi | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | 下载 |
| 2N72281N6072E3 | Microsemi | 1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507 | 下载 |
| 2N7228D | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 下载 |
| 2N7228DPBF | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 下载 |
| 2N7228JANTX | Microsemi | 34 A, 100 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | 下载 |
| 2N7228-QR-EB | TT Electronics plc | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | 下载 |
| 2N7228-QR-EB | SEMELAB | 12A, 500V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | 下载 |
| 2N7228R1 | TT Electronics plc | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | 下载 |
| 2N7228R1 | SEMELAB | 12A, 500V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | 下载 |
| 2N7228TX | International Rectifier ( Infineon ) | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 下载 |
| 2N7228TX | Renesas(瑞萨电子) | 12A, 500V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | 下载 |
| 2N7228TX | Harris | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 下载 |
| 2N7228TX | Intersil ( Renesas ) | 12A, 500V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | 下载 |
| 2N7228TXV | Intersil ( Renesas ) | 12A, 500V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | 下载 |
| 对应元器件 | pdf文档资料下载 |
|---|---|
| 2N7228TX 、 2N7228TX 、 2N7228TX 、 2N7228TX 、 2N7228TXV 、 2N7228TXV 、 2N7228TXV 、 2N7228TXV 、 2N7228TXV | 下载文档 |
| 2N72281N6036 、 2N72281N6036A 、 2N72281N6036AE3 、 2N72281N6036E3 、 2N72281N6072 、 2N72281N6072A 、 2N72281N6072AE3 、 2N72281N6072E3 | 下载文档 |
| 2N7228 、 2N7228 、 2N7228-QR-EB 、 2N7228-QR-EB 、 2N7228R1 、 2N7228R1 | 下载文档 |
| 2N7228D 、 2N7228DPBF 、 2N7228U 、 2N7228U 、 2N7228UPBF | 下载文档 |
| 2N7228_10 、 2N7228U | 下载文档 |
| 2N7228JANTX | 下载文档 |
| 2N7228 | 下载文档 |
| 2N7228 | 下载文档 |
| 2N7228 | 下载文档 |
| 2N7228 | 下载文档 |
| 型号 | 2N7228TXV | 2N7228TX | 2N7228TX | 2N7228TX | 2N7228TX | 2N7228TXV | 2N7228TXV | 2N7228TXV | 2N7228TXV |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | 12A, 500V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | 12A, 500V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 12A, 500V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 12A, 500V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA |
| 包装说明 | FLANGE MOUNT, S-PSFM-T3 | FLANGE MOUNT, S-PSFM-T3 | FLANGE MOUNT, S-PSFM-T3 | FLANGE MOUNT, S-PSFM-T3 | FLANGE MOUNT, S-PSFM-T3 | FLANGE MOUNT, S-PSFM-T3 | FLANGE MOUNT, S-PSFM-T3 | FLANGE MOUNT, S-PSFM-T3 | FLANGE MOUNT, S-PSFM-T3 |
| Reach Compliance Code | unknown | unknown | compliant | unknow | unknow | compliant | unknow | unknow | unknow |
| 其他特性 | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED | RADIATION HARDENED |
| 外壳连接 | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 500 V | 500 V | 500 V | 500 V | 500 V | 500 V | 500 V | 500 V | 500 V |
| 最大漏极电流 (ID) | 12 A | 12 A | 12 A | 12 A | 12 A | 12 A | 12 A | 12 A | 12 A |
| 最大漏源导通电阻 | 0.415 Ω | 0.415 Ω | 0.415 Ω | 0.415 Ω | 0.415 Ω | 0.415 Ω | 0.415 Ω | 0.415 Ω | 0.415 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-254AA | TO-254AA | TO-254AA | TO-254AA | TO-254AA | TO-254AA | TO-254AA | TO-254AA | TO-254AA |
| JESD-30 代码 | S-PSFM-T3 | S-PSFM-T3 | S-PSFM-T3 | S-PSFM-T3 | S-PSFM-T3 | S-PSFM-T3 | S-PSFM-T3 | S-PSFM-T3 | S-PSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE | SQUARE |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 参考标准 | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) | MILITARY STANDARD (USA) |
| 表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 功耗环境最大值 | 150 W | 150 W | - | 150 W | 150 W | - | 150 W | 150 W | - |
| Base Number Matches | - | - | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
电子工程世界版权所有
京B2-20211791
京ICP备10001474号-1
电信业务审批[2006]字第258号函
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved