器件名 |
厂商 |
描 述 |
功能 |
25N10 |
UNISONIC TECHNOLOGIES CO.,LTD |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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25N10 |
ISC |
isc N-Channel MOSFET Transistor |
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25N10 |
Inchange Semiconductor |
MOSFETs;23A;100V;TO-252 |
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25N10 |
台湾微碧(VBsemi) |
N-Channel 100-V (D-S) MOSFET |
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25N10_15 |
UNISONIC TECHNOLOGIES CO.,LTD |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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25N102K |
HUAAN |
Metal Oxide Varistors Data Sheet |
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25N10F7 |
台湾微碧(VBsemi) |
N-Channel 100-V (D-S) MOSFET |
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25N10GH-HF |
台湾微碧(VBsemi) |
N-Channel 100-V (D-S) MOSFET |
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25N10G-TF1-T |
UNISONIC TECHNOLOGIES CO.,LTD |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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25N10G-TF2-T |
UNISONIC TECHNOLOGIES CO.,LTD |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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25N10G-TF3-T |
UNISONIC TECHNOLOGIES CO.,LTD |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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25N10G-TM3-T |
UNISONIC TECHNOLOGIES CO.,LTD |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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25N10G-TN3-R |
UNISONIC TECHNOLOGIES CO.,LTD |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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25N10L-TF1-T |
UNISONIC TECHNOLOGIES CO.,LTD |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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25N10L-TF2-T |
UNISONIC TECHNOLOGIES CO.,LTD |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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25N10L-TF3-T |
UNISONIC TECHNOLOGIES CO.,LTD |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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25N10L-TM3-T |
UNISONIC TECHNOLOGIES CO.,LTD |
N-CHANNEL ENHANCEMENT MODE MOSFET |
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|
25N10L-TN3-R |
UNISONIC TECHNOLOGIES CO.,LTD |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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|
25N10L-TN3-R |
友顺(UTC) |
漏源电压(Vdss):100V 连续漏极电流(Id)(25°C 时):23A(Tc) 栅源极阈值电压:4V @ 250uA 漏源导通电阻:80mΩ @ 16A,10V 最大功率耗散(Ta=25°C):41W(Tc) 类型:N沟道 |
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25N10L-TN3-R |
深圳杜因特(DOINGTER) |
N-Channel MOSFET uses advanced SGT technology |
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