WPMD3002 场效应晶体管
参数指标
Product:WPMD3002
Configuration:P-Channel MOSFET
Channel:2
Drain-Source Voltage VDS(V)(Max.):-30
Gate-Source Voltage VGS(V)(Max.):±20
Gate Threshold Voltage VGS(th)(V)(Max.):-2.5
Drain-to-Source On-Resistance RDS(ON)@(VGS = 4.5V)(Ω)(Typ.):0.07
Drain-to-Source On-Resistance RDS(ON)@(VGS = 4.5V)(Ω)(Max.):0.09
Input Capacitance CISS(pF)(Typ.):670
Continuous Drain Current ID(@TA = 25℃)(A)(Max.):-3.8
Power Dissipation PD(@TA = 25℃)(W)(Max.):1.1
Body Diode Forward Voltage VSD(V)(Typ.):-0.78
Body Diode Forward Voltage VSD(V)(Max.):-1.5
Package:SOP-8L
Size(mm)(LxW):4.85 x 6.0
热搜元器件
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