H9926S

功能特点

产品名称：20V 6A 双N沟道增强型MOSFET

Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

产品型号：H9926S

产品描述：

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)

产品特征：

RDS(on)=40mΩ@VGS=2.5V, ID=5.2A; RDS(on)=30mΩ@VGS=4.5V, ID=6A

High Density Cell Design for Ultra Low On-Resistance

High Power and Current Handing Capability

Fully Characterized Avalanche Voltage and Current

Ideal for Li ion Battery Pack Applications

产品应用：

Battery Protection

Load Switch

Power Management

参数：

Channel 频道: N

VDSS 电压：20V

ID 电流: 6A

VGS 启动电压: ±8V

RDS（on）Max.导通电阻：0.03ohm

RDS(on) @VGS : 4.5V

RDS(on) @ID：6A

ESD Protected ：NO

ROSH ：PF(无铅)

Package：SO-8