600V 10A N沟道功率MOSFET
功能特点
产品名称:600V 10A N沟道功率MOSFET
N-Channel Power MOSFET (600V, 10A)
产品型号:H10N60E
产品特征:
H10N60 is a High voltage N Channel enhancement mode power MOSFET chip fabricated in advanced silicon epitaxial planar technology
Advanced termination scheme to provide enhanced voltageblocking capability
Avalanche Energy Specified
Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
The packaged product is widely used in AC-DC power suppliers, DCDC converters and H bridge PWM motor drivers
产品应用:
Switch Mode Power Supply
Uninterruptable Power Supply
High Speed Power Switching
参数:
Channel 频道: N
VDSS 电压:600V
ID 电流: 10A
VGS 启动电压: ±30V
RDS(on)Max.导通电阻:1ohm
RDS(on) @VGS : 10V
RDS(on) @ID:5A
ROSH :PF(无铅)
Package:TO-220AB
热搜元器件
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