MOSFET
功能特点
产品名称:MOSFET
产品型号:50N03
产品描述:
The 50N03 uses advanced trench technology
And design to provide excellent RDS (ON ) with
Low gate charge . It can be used in a wide
Vanety of applications .
?? VDS = 30 V, ID = 50 A
RDS(ON) < 6.5 mΩ @ VGS = 10 V
?? High density cell design for ultra low Rdson
?? Fully characterized Avalanche voltage and current
?? Good stabilty and unifomity with high EAS
?? Excellent package for good heat dissipation
?? Special process technology for high ESD capability
参数:
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 50 V
Drain Current-Continuous ID 35 A
Drain Current -Pulsed (Note 1) IDM 140 A
Maximum Power Dissipation PD 60W
VGS Gate-to-Source Voltage ± 20 V
EAS Single PulseAvalanche Energy 70 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃
封装:TO-252-2L
热搜元器件
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