MOSFET
功能特点
产品名称:MOSFET
产品型号:4N60F
产品描述:
This Power MOSFET is produced using
advanced planar stripe DMOS technology.
This latest technology has been especially
designed to minimize on-state resistance,
Have a high rugged avalanche
characteristics.These devices are well suited
for high efficiency switched mode power
supplies, active power factor
correction.electronic lamp ballasts based on
half bridge topology.
参数:
Drain-Source Voltage VDS 600 V
Drain Current-Continuous ID 4A
Drain Current -Pulsed (Note 1) IDM 16 A
Maximum Power Dissipation PD 100W
VGS Gate-to-Source Voltage ± 30 V
EAS Single PulseAvalanche Energy 160 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns
封装:TO-220F
热搜元器件
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