MOSFET
功能特点
产品名称:MOSFET
产品型号:30P55
产品描述:
The 30P55 uses advanced trench technology
And design to provide excellent RDS (ON ) with
Low gate charge . It can be used in a wide
Vanety of applications
VDS = -55 V, ID = -30 A
RDS(ON) < 40 mΩ @ VGS =-10 V
?? High density cell design for ultra low Rdson
?? Fully characterized Avalanche voltage and current
?? Good stabilty and unifomity with high EAS
?? Excellent package for good heat dissipation
?? Special process technology for high ESD capability、
参数:
VDS Drain-to-Source Voltage -55 V
ID Continuous Drain Current -30A
Drain Current-Continuous(Tc=100℃) -21 A
IDM Pulsed Drain Current 110A
PD Power Dissipation 90 W
VGS Gate-to-Source Voltage ± 20 V
EAS Single PulseAvalanche Energy 260 mJ
TJ and TSTG Operating Junction and Storage Temperature Range -55 to 150 ℃
封装:TO-252-2L
热搜元器件
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