12N60F

功能特点

产品名称：MOSFET

产品型号：12N60F

产品描述：

This Power MOSFET is produced using

advanced planar stripe DMOS technology.

This latest technology has been especially

designed to minimize on-state resistance,

Have a high rugged avalanche

characteristics.These devices are well suited

for high efficiency switched mode power

supplies, active power factor

correction.electronic lamp ballasts based on

half bridge topology.

参数：

Drain-Source Voltage VDS 600 V

Drain Current-Continuous ID 12A

Drain Current -Pulsed (Note 1) IDM 48A

Maximum Power Dissipation PD 231W

VGS Gate-to-Source Voltage ± 30 V

EAS Single PulseAvalanche Energy 865mJ

Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

封装：TO-220F