100N03

功能特点

产品名称：MOSFET

产品型号：100N03

产品描述：

The 100N03 uses advanced trench technology

And design to provide excellent RDS (ON ) with

Low gate charge . It can be used in a wide

Vanety of applications .

?? VDS = 30 V, ID = 100 A

RDS(ON) < 5.5 mΩ @ VGS = 10 V (Typ:4mΩ )

?? High density cell design for ultra low Rdson

?? Fully characterized Avalanche voltage and current

?? Good stabilty and unifomity with high EAS

?? Excellent package for good heat dissipation

?? Special process technology for high ESD capability

参数：

Drain-Source Voltage VDS 30 V

Gate-Source Voltage VGS 100 V

Drain Current-Continuous ID 70 A

Drain Current -Pulsed (Note 1) IDM 400 A

Maximum Power Dissipation PD 180W

VGS Gate-to-Source Voltage ± 20 V

EAS Single PulseAvalanche Energy 350 mJ

Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃

封装：TO-220