Dual Low-Power JFET-Input General-Purpose Operational Amplifier 8-SOIC -40 to 85
| 参数名称 | 属性值 |
| Brand Name | Texas Instruments |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 零件包装代码 | SOIC |
| 包装说明 | SOP, SOP8,.25 |
| 针数 | 8 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| Factory Lead Time | 1 week |
| Samacsys Descripti | Dual Low-Power JFET-Input General-Purpose Operational Amplifie |
| 放大器类型 | OPERATIONAL AMPLIFIER |
| 架构 | VOLTAGE-FEEDBACK |
| 最大平均偏置电流 (IIB) | 0.0002 µA |
| 25C 时的最大偏置电流 (IIB) | 0.0002 µA |
| 最小共模抑制比 | 70 dB |
| 标称共模抑制比 | 86 dB |
| 频率补偿 | YES |
| 最大输入失调电流 (IIO) | 0.0001 µA |
| 最大输入失调电压 | 15000 µV |
| JESD-30 代码 | R-PDSO-G8 |
| JESD-609代码 | e4 |
| 长度 | 4.9 mm |
| 低-偏置 | YES |
| 低-失调 | NO |
| 微功率 | YES |
| 湿度敏感等级 | 1 |
| 负供电电压上限 | -18 V |
| 标称负供电电压 (Vsup) | -15 V |
| 功能数量 | 2 |
| 端子数量 | 8 |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOP |
| 封装等效代码 | SOP8,.25 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 包装方法 | TUBE |
| 峰值回流温度（摄氏度） | 260 |
| 电源 | +-15 V |
| 可编程功率 | NO |
| 认证状态 | Not Qualified |
| 筛选级别 | MIL-PRF-38535 |
| 座面最大高度 | 1.75 mm |
| 最小摆率 | 1.5 V/us |
| 标称压摆率 | 3.5 V/us |
| 最大压摆率 | 0.5 mA |
| 供电电压上限 | 18 V |
| 标称供电电压 (Vsup) | 15 V |
| 表面贴装 | YES |
| 技术 | BIPOLAR |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 标称均一增益带宽 | 1000 kHz |
| 最小电压增益 | 4000 |
| 宽带 | NO |
| 宽度 | 3.9 mm |
| 器件名 | 厂商 | 描述 |
|---|---|---|
| TL062IDE4 | Texas Instruments(德州仪器) | Operational Amplifiers - Op Amps Dual Low-Noise JFET-Input |
| TL062CDE4 | Texas Instruments(德州仪器) | Dual Low-Power JFET-Input General-Purpose Operational Amplifier 8-SOIC 0 to 70 |
| OP08EP | Rochester Electronics | OP-AMP, 260uV OFFSET-MAX, 0.8MHz BAND WIDTH, PDIP8, MINI, PLASTIC, DIP-8 |
| TL062CDRE4 | Texas Instruments(德州仪器) | Dual Low-Power JFET-Input General-Purpose Operational Amplifier 8-SOIC 0 to 70 |
| TL062CDG4 | Rochester Electronics | DUAL OP-AMP, 20000uV OFFSET-MAX, 1MHz BAND WIDTH, PDSO8, GREEN, PLASTIC, MS-012AA, SOIC-8 |
| TL062BID | ST(意法半导体) | OP-AMP |
| TL062BCDR | Texas Instruments(德州仪器) | Low-Power JFET-Input Operational Amplifier 8-SOIC 0 to 70 |
| LM308D | ST(意法半导体) | OP-AMP, 10000uV OFFSET-MAX, 0.8MHz BAND WIDTH, PDSO8, MICRO, PLASTIC, SO-8 |
| PM1008AZ | Precision Monolithics Inc | Operational Amplifier, 1 Func, 320uV Offset-Max, BIPolar, CDIP8, HERMETIC SEALED, DIP-8 |
| LM108AN-14 | Philips Semiconductors (NXP Semiconductors N.V.) | OP-AMP, PDIP8, PLASTIC, DIP-8 |
| M38510/10104SPA | Texas Instruments(德州仪器) | OP-AMP, 1000uV OFFSET-MAX, CDIP8, CERAMIC, DIP-8 |
| LM308ADR2 | Motorola ( NXP ) | OP-AMP, 730uV OFFSET-MAX, 1MHz BAND WIDTH, PDSO8, PLASTIC, SO-8 |
| LM308N | Signetics | Operational Amplifier, 1 Func, 10000uV Offset-Max, BIPolar, PDIP8, PLASTIC, DIP-8 |
| JM38510/10104BPB | Precision Monolithics Inc | Operational Amplifier, 1 Func, 1000uV Offset-Max, BIPolar, CDIP8, HERMETIC SEALED, DIP-8 |
| LM308AD | Motorola ( NXP ) | Operational Amplifier, 1 Func, 730uV Offset-Max, BIPolar, PDSO8, PLASTIC, SO-8 |
| LM308ANG | ON Semiconductor(安森美) | OP-AMP, PDIP8, LEAD FREE, PLASTIC, DIP-8 |
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