DMN61D8LVT-13,DMN61D8LVT-13 pdf中文资料,DMN61D8LVT-13引脚图,DMN61D8LVT-13电路-Datasheet-电子工程世界

DMN61D8LVT-13: 产品描述ARM Microcontrollers - MCU; 产品类别半导体分立半导体; 文件大小479KB，共9页; 制造商Diodes; 官网地址http://www.diodes.com/

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ARM Microcontrollers - MCU

参数名称	属性值
产品种类 Product Category	MOSFET
制造商 Manufacturer	Diodes
RoHS	Details
技术 Technology	Si
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	TSOT-26-6
Number of Channels	2 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V, 60 V
Id - Continuous Drain Current	630 mA, 630 mA
Rds On - Drain-Source Resistance	1.1 Ohms, 1.1 Ohms
Vgs th - Gate-Source Threshold Voltage	1.3 V, 1.3 V
Vgs - Gate-Source Voltage	12 V, 12 V
Qg - Gate Charge	740 pC, 740 pC
最小工作温度 Minimum Operating Temperature	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C
Configuration	Dual
Channel Mode	Enhancement
系列 Packaging	MouseReel
系列 Packaging	Reel
系列 Packaging	Cut Tape
Fall Time	440 ns, 440 ns
Forward Transconductance - Min	80 mS, 80 mS
Pd-功率耗散 Pd - Power Dissipation	1.09 W
Rise Time	301 ns, 301 ns
工厂包装数量 Factory Pack Quantity	10000
Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	582 ns, 582 ns
Typical Turn-On Delay Time	131 ns, 131 ns
单位重量 Unit Weight	0.000459 oz

	DMN61D8LVT-13	DMN61D8LVTQ-7
描述	ARM Microcontrollers - MCU	CAN Interface IC
产品种类 Product Category	MOSFET	MOSFET
制造商 Manufacturer	Diodes	Diodes
RoHS	Details	Details
技术 Technology	Si	Si
安装风格 Mounting Style	SMD/SMT	SMD/SMT
封装 / 箱体 Package / Case	TSOT-26-6	TSOT-26-6
Number of Channels	2 Channel	2 Channel
Transistor Polarity	N-Channel	N-Channel
Vds - Drain-Source Breakdown Voltage	60 V, 60 V	60 V, 60 V
Id - Continuous Drain Current	630 mA, 630 mA	630 mA, 630 mA
Rds On - Drain-Source Resistance	1.1 Ohms, 1.1 Ohms	1.1 Ohms, 1.1 Ohms
Vgs th - Gate-Source Threshold Voltage	1.3 V, 1.3 V	1.3 V, 1.3 V
Vgs - Gate-Source Voltage	12 V, 12 V	12 V, 12 V
Qg - Gate Charge	740 pC, 740 pC	740 pC, 740 pC
最小工作温度 Minimum Operating Temperature	- 55 C	- 55 C
最大工作温度 Maximum Operating Temperature	+ 150 C	+ 150 C
Configuration	Dual	Dual
Channel Mode	Enhancement	Enhancement
Fall Time	440 ns, 440 ns	440 ns, 440 ns
Forward Transconductance - Min	80 mS, 80 mS	80 mS, 80 mS
Pd-功率耗散 Pd - Power Dissipation	1.09 W	1.09 W
Rise Time	301 ns, 301 ns	301 ns, 301 ns
工厂包装数量 Factory Pack Quantity	10000	3000
Transistor Type	2 N-Channel	2 N-Channel
Typical Turn-Off Delay Time	582 ns, 582 ns	582 ns, 582 ns
Typical Turn-On Delay Time	131 ns, 131 ns	131 ns, 131 ns
系列 Packaging	Cut Tape	Cut Tape

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