CMT2N7002
S
MALL
S
IGNAL
MOSFET
GENERAL DESCRIPTION
This N-Channel enhancement mode field effect transistor is
produced using high cell density, DMOS technology. These
products have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching performance.
It can be used in most applications requiring up to 115mA DC
and can deliver pulsed currents up to 800mA. This product is
particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers, and
other switching applications.
FEATURES
High Density Cell Design for Low R
DS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability
PIN CONFIGURATION
SOT-23, SOT-323
SOT-363
SYMBOL
D
S1
Top View
3
Top View
D2
G1
DRAIN
SOURCE
G
GATE
1
2
S2
G2
D1
S
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT2N7002
CMT2N7002G*
CMT2N7002WG*
CMT2N7002DWG*
CMT2N7002X*
CMT2N7002WX*
CMT2N7002DWX*
Package
SOT-23
SOT-23
SOT-323
SOT-363
SOT-23
SOT-323
SOT-363
W: Suffix for Package SOT-323
X : Suffix for Halogen Free Product
*Note:
G : Suffix for Pb Free Product
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (R
GS
= 1.0MΩ)
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
－
Continue
－
Non-repetitive
Total Power Dissipation
Derate above 25℃
Single Pulse Drain-to-Source Avalanche Energy
－
T
J
= 25℃
(V
DD
= 50V, V
GS
= 10V, I
AS
= 0.8A, L = 30mH, R
G
= 25Ω)
Operating and Storage Temperature Range
Thermal Resistance
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
T
J
, T
STG
θ
JA
T
L
-55 to 150
417
300
℃
℃/W
℃
E
AS
Symbol
V
DSS
V
DGR
I
D
I
DM
V
GS
V
GSM
P
D
Value
60
60
115
800
±20
±40
225
1.8
9.6
V
V
mW
mW/℃
mJ
Unit
V
V
mA
2009/07/17
Rev. 1.8
Champion Microelectronic Corporation
Page 1
CMT2N7002
S
MALL
S
IGNAL
MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T
J
= 25℃.
Characteristic
Symbol
Min
CMT2N7002
Typ
Max
Units
V
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 10
μA)
Drain-Source Leakage Current
(V
DS
= 60 V, V
GS
= 0 V)
(V
DS
= 60 V, V
GS
= 0 V, T
J
= 125℃)
Gate-Source Leakage Current-Forward (V
gsf
= 20 V)
Gate-Source Leakage Current-Reverse (V
gsf
= -20 V)
Gate Threshold Voltage *
(V
DS
= V
GS
, I
D
= 250
μA)
On-State Drain Current (V
DS
≧
2.0 V
DS(on)
, V
GS
= 10V)
Static Drain-Source On-Resistance *
(V
GS
= 10 V, I
D
= 0.5A)
(V
GS
= 10 V, I
D
= 0.5A, T
J
= 125℃)
(V
GS
= 5.0 V, I
D
= 50mA)
(V
GS
= 5.0 V, I
D
= 50mA, T
J
= 125℃)
Drain-Source On-Voltage *
(V
GS
= 10 V, I
D
= 0.5A)
(V
GS
= 5.0 V, I
D
= 50mA)
Forward Transconductance (V
DS
≧
2.0 V
DS(on)
, I
D
= 200mA) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DD
= 25 V, I
D
= 500 mA,
V
gen
= 10 V, R
G
= 25Ω, R
L
= 50Ω) *
V
(BR)DSS
60
I
DSS
1.0
0.5
I
GSSF
I
GSSF
V
GS(th)
1.0
100
-100
2.5
μA
mA
nA
nA
V
I
d(on)
R
DS(on)
500
mA
Ω
7.5
13.5
7.5
13.5
V
DS(on)
3.75
0.375
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
SD
I
S
I
SM
80
50
25
5.0
20
40
-1.5
-115
-800
V
mmhos
pF
pF
pF
ns
ns
V
mA
mA
Diode Forward On-Voltage (IS = 115 mA, VGS = 0V)
Source Current Continuous (Body Diode)
Source Current Pulsed
* Pulse Test: Pulse Width
≦300μs,
Duty Cycle
≦2%
2009/07/17
Rev. 1.8
Champion Microelectronic Corporation
Page 2
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