CMT2N7002AG
S
MALL
S
IGNAL
MOSFET
GENERAL DESCRIPTION
This N-Channel enhancement mode field effect transistor
is produced using high cell density, DMOS technology.
These products have been designed to minimize
on-state resistance while provide rugged, reliable, and
fast switching performance. It can be used in most
applications requiring up to 115mA DC and can deliver
pulsed currents up to 800mA. This product is particularly
suited for low voltage, low current applications such as
small servo motor control, power MOSFET gate drivers,
and other switching applications.
FEATURES
High Density Cell Design for Low R
DS(ON)
Voltage Controlled Small Signal Switch
Rugged and Reliable
High Saturation Current Capability
Built-in G-S Protection Diode
PIN CONFIGURATION
SOT-23
SYMBOL
Top View
3
DRAIN
1
SOURCE
2
GATE
N-Channel MOSFET
ORDERING INFORMATION
Part Number
CMT2N7002AG
Package
SOT-23
*Note:
G : Suffix for Pb Free Product
2007/07/18
Rev. 1.0
Champion Microelectronic Corporation
Page 1
CMT2N7002AG
S
MALL
S
IGNAL
MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain Source Voltage
Drain-Gate Voltage (R
GS
= 1.0MΩ)
Drain to Current
－
Continuous
－
Pulsed
Gate-to-Source Voltage
Total Power Dissipation
Derate above 25℃
Single Pulse Drain-to-Source Avalanche Energy
－
T
J
= 25℃
(V
DD
= 50V, V
GS
= 10V, I
AS
= 0.5A, L = 20mH, R
G
= 25Ω)
Operating and Storage Temperature Range
Thermal Resistance
－
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
T
J
, T
STG
θ
JA
T
L
-55 to 150
417
300
℃
℃/W
℃
E
AS
Symbol
V
DSS
V
DGR
I
D
I
DM
V
GS
P
D
Value
60
60
±115
±800
±20
225
1.8
2.5
V
mW
mW/℃
mJ
Unit
V
V
mA
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, T
J
= 25℃.)
CMT2N7002AG
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 V, I
D
= 10
μA)
Drain-Source Leakage Current
(V
DS
= 60 V, V
GS
= 0 V)
(V
DS
= 60 V, V
GS
= 0 V, T
J
= 125℃)
Gate-Source Leakage Current-Forward (V
gsf
= 20 V)
Gate-Source Leakage Current-Reverse (V
gsf
= -20 V)
Gate Threshold Voltage *
(V
DS
= V
GS
, I
D
= 250
μA)
On-State Drain Current (V
DS
≧
2.0 V
DS(on)
, V
GS
= 10V)
Static Drain-Source On-Resistance *
(V
GS
= 10 V, I
D
= 0.5A)
(V
GS
= 10 V, I
D
= 0.5A, T
C
= 125℃)
(V
GS
= 5.0 V, I
D
= 50mA)
(V
GS
= 5.0 V, I
D
= 50mA, T
C
= 125℃)
Drain-Source On-Voltage *
(V
GS
= 10 V, I
D
= 0.5A)
(V
GS
= 5.0 V, I
D
= 50mA)
Forward Transconductance (V
DS
≧
2.0 V
DS(on)
, I
D
= 200mA) *
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
(V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz)
(V
DD
= 25 V, I
D
= 500 mA,
V
gen
= 10 V, R
G
= 25Ω, R
L
= 50Ω) *
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
d(off)
V
SD
I
S
I
SM
80
50
25
5.0
20
40
-1.5
-115
-800
V
DS(on)
3.75
0.375
mmhos
pF
pF
pF
ns
ns
V
mA
mA
I
d(on)
R
DS(on)
7.5
13.5
7.5
13.5
V
500
mA
Ω
I
GSS
I
GSS
V
GS(th)
1.0
I
DSS
1.0
0.5
10
-10
2.5
μA
mA
uA
uA
V
Symbol
V
(BR)DSS
Min
60
Typ
Max
Units
V
Diode Forward On-Voltage (IS = 115 mA, VGS = 0V)
Source Current Continuous (Body Diode)
Source Current Pulsed
* Pulse Test: Pulse Width
≦300µs,
Duty Cycle
≦2%
2007/07/18
Rev. 1.0
Champion Microelectronic Corporation
Page 2
CMT2N7002AG
S
MALL
S
IGNAL
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 5. Capacitance
2007/07/18
Rev. 1.0
Champion Microelectronic Corporation
Page 3
CMT2N7002AG
S
MALL
S
IGNAL
MOSFET
PACKAGE DIMENSION
SOT-23
D
3
b1
c1
c
With Plating
A
A1
A2
b
b1
c
c1
D
E
E
E1
Base Metal
b
Section
B-B
1
e
e1
2
E1
b
L
L1
e
e1
θ1
A2
A
θ
θ1
θ2
A1
θ2
See
Section
B-B
2007/07/18
Rev. 1.0
Champion Microelectronic Corporation
θ
L
L1
Page 4
CMT2N7002AG
S
MALL
S
IGNAL
MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
Sales & Marketing
7F-6, No.32, Sec. 1, Chenggong Rd., Nangang
District, Taipei City 115, Taiwan
T E L : +886-2-2788 0558
F A X : +886-2-2788 2985
2007/07/18
Rev. 1.0
Champion Microelectronic Corporation
Page 5
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