SPN1012
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1012 is the N-Channel enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. This high density
process is especially tailored to minimize on-state
resistance and provide superior switching performance.
These devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits where
high-side switching , low in-line power loss, and
resistance to transients are needed.
APPLICATIONS
Drivers : Relays/Solenoids/Lamps/Hammers
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
FEATURES
N-Channel
20V/0.65A,R
DS(ON)
=380mΩ@V
GS
=4.5V
20V/0.55A,R
DS(ON)
=450mΩ@V
GS
=2.5V
20V/0.45A,R
DS(ON)
=800mΩ@V
GS
=1.8V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-523 (SC-89) package design
PIN CONFIGURATION( SOT-523 / SC-89 )
PART MARKING
2007/01/ 02
Ver.2
Page 1
SPN1012
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
SPN1012S52RG
※
SPN1012S52RG : Tape Reel ; Pb – Free
Package
SOT-523
Part
Marking
X
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=80℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
Typical
20
±12
Unit
V
V
A
A
A
W
℃
℃
0.65
0.45
1.0
0.3
0.27
0.16
-55/150
-55/150
2007/01/ 02
Ver.2
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SPN1012
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
= 250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=0V,V
GS
=±12V
V
DS
= 20V,V
GS
=0V
V
DS
= 20V,V
GS
=0V
T
J
=55℃
V
DS
≥
4.5V,V
GS
=5V
V
GS
=4.5V,I
D
=0.65A
V
GS
=2.5V,I
D
=0.55A
V
GS
=1.8V,I
D
=0.45A
V
DS
=10V,I
D
=0.4A
I
S
=0.15A,V
GS
=0V
20
0.35
1.0
100
1
5
0.7
0.26
0.32
0.42
1.0
0.8
0.38
0.45
0.80
1.2
V
nA
uA
A
Ω
S
V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
=10V,V
GS
=4.5V,
I
D
≡0.6A
1.2
0.2
0.3
5
8
10
1.2
1.5
nC
10
15
18
2.8
ns
V
DD
=10V,R
L
=10Ω ,
I
D
≡0.5A
V
GEN
=4.5V ,R
G
=6Ω
2007/01/ 02
Ver.2
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