SPN8080
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8080 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application , notebook computer power management and
other battery powered circuits where high-side
switching .
FEATURES
80V/80A,R
DS(ON)
= 4.7mΩ@V
GS
= 10V
80V/37A,R
DS(ON)
= 8.7mΩ@V
GS
= 6V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-220-3L package design
APPLICATIONS
DC/DC Converter
Load Switch
SMPS Secondary Side Synchronous Rectifier
PIN CONFIGURATION( TO-220-3L )
PART MARKING
2008 / 11 / 25
Ver.1
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SPN8080
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
D
S
Description
Gate
Drain
Source
ORDERING INFORMATION
Part Number
SPN8080T220TGB
Package
TO-220-3L
Part
Marking
SPN8080
※
SPN8080T220TGB: Tube ; Pb – Free; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current
Avalanche Current
Power Dissipation
Avalanche Energy with Single Pulse
(
Tj=25℃, ID=30A, VDD=37.5V )
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
AS
P
D
EAS
T
J
T
STG
R
θJA
Typical
80
±20
Unit
V
V
A
A
A
W
mJ
80
15
300
15
62.5
3.38
400
-55/150
-55/150
2
℃
℃
℃/W
2008 / 11 / 25
Ver.1
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SPN8080
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=40V,R
L
=20Ω
I
D
≡37A,V
GEN
=10V
R
G
=3.3Ω
V
DS
=25V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±20V
V
DS
=80V,V
GS
=0V
V
DS
=80V,V
GS
=0V
T
J
= 150 °C
V
DS
≥5V,V
GS
=10V
V
GS
= 10V,I
D
=80A
V
GS
= 6V,I
D
=37A
V
DS
=10V,I
D
=80A
I
S
=40A,V
GS
=0V
80
2.0
4.0
±100
1
250
70
4.0
5.8
150
4.7
8.7
1.5
250
83
62
14500
850
280
V
nA
uA
A
mΩ
S
V
V
DS
=40V,V
GS
=10V
I
D
= 80A
nC
pF
80
37
140
27
nS
2008 / 11 / 25
Ver.1
Page 3
SPN8080
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2008 / 11 / 25
Ver.1
Page 4
SPN8080
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2008 / 11 / 25
Ver.1
Page 5
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