SPN8878
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN8878 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology. The SPN8878 has
been designed specifically to improve the overall
efficiency of DC/DC converters using either synchronous
or conventional switching PWM controllers. It has been
optimized for low gate charge, low R
DS(ON)
and fast
switching speed.
FEATURES
30V/20A,R
DS(ON)
= 12mΩ@V
GS
=10V
30V/15A,R
DS(ON)
= 17mΩ@V
GS
=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
TO-252 package design
APPLICATIONS
Power Management in Note book
Powered System
DC/DC Converter
Load Switch
PIN CONFIGURATION
TO-252
PART MARKING
2009/04/20
Ver.1
Page 1
SPN8878
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
Description
Gate
Source
Drain
ORDERING INFORMATION
Part Number
Package
Part
Marking
SPN8878T252RGB
TO-252
※
SPN8878T252RG : Tape Reel ; Pb – Free ; Halogen - Free
SPN8878
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Drain Current
TO-252-2L
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
TO-251
T
A
=25℃
T
A
=100℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Typical
30
±20
18
13
40
5
40
55
150
-55/150
100
Unit
V
V
A
A
A
W
℃
℃
℃
/W
2009/04/20
Ver.1
Page 2
SPN8878
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Symbol
Conditions
Min.
Typ
Max.
Unit
V
(BR)DSS
V
GS
=0V,I
D
=250uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
I
D(on)
R
DS(on)
gfs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15V,R
L
=0.3Ω
I
D
≡50A,V
GEN
=10V
R
G
=1Ω
V
DS
=15V
GS
=0V
f=1MHz
V
DS
=0V,V
GS
=±20V
V
DS
=24V,V
GS
=0V
V
DS
=24V,V
GS
=0V
T
J
=85℃
V
DS
≥5V,V
GS
=10V
V
GS
= 10V,I
D
=20A
V
GS
=4.5V,I
D
=15A
V
DS
=15V,I
D
=20A
I
S
=40A,V
GS
=0V
30
1.0
3.0
±100
1
5
40
0.010
0.013
15
0.8
28
6
5
1600
285
140
9
15
20
12
15
25
30
20
1.5
42
0.012
0.017
V
nA
uA
A
Ω
S
V
V
DS
=15V,V
GS
=10V
I
D
= 50A
nC
pF
nS
2009/04/20
Ver.1
Page 3
SPN8878
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2009/04/20
Ver.1
Page 4
SPN8878
N-Channel Enhancement Mode MOSFET
TYPICAL CHARACTERISTICS
2009/04/20
Ver.1
Page 5
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