SPN6435
Dual N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN6435 is the Dual N-Channel enhancement
mode field effect transistors are produced using high
cell density DMOS technology. These products have
been designed to minimize on-state resistance while
provide rugged, reliable, and fast switching
performance. They can be used in most applications
requiring up to 300mA DC and can deliver pulsed
currents up to 1.0A. These products are particularly
suited for low voltage, low current applications such as
small servo motor control, power MOSFET gate
drivers, and other switching applications.
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
High saturation current capability. Direct
Logic-Level Interface: TTL/CMOS
Battery Operated Systems
Solid-State Relays
FEATURES
40V/0.30A , R
DS(ON)
= 4.0Ω@V
GS
=10V
40V/0.20A , R
DS(ON)
= 5.0Ω@V
GS
=5.0V
40V/0.02A , R
DS(ON)
= 10.0Ω@V
GS
=2.5V
Super high density cell design for extremely low
R
DS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-363 package design
PIN CONFIGURATION ( SOT-363 / SC-70-6L )
PART MARKING
2010/12/17
Ver.3
Page 1
SPN6435
Dual N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
4
5
6
Symbol
S1
G1
D2
S2
G2
D1
Description
Source 1
Gate 1
Drain 2
Source 2
Gate 2
Drain1
ORDERING INFORMATION
Part Number
SPN6435S36RG
SPN6435S36RGB
Package
SOT-363
SOT-363
Part
Marking
435YW
435YW
※
Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
※
SPN6435S36RG : Tape Reel ; Pb – Free
※
SPN6435S36RGB : Tape Reel ; Pb – Free ; Halogen – Free
ABSOULTE MAXIMUM RATINGS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate –Source Voltage - Continuous
Gate –Source Voltage - Non Repetitive ( t
p
< 50μs)
Continuous Drain Current(T
J
=150
℃
)
Pulsed Drain Current (∗)
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=25℃
Symbol
V
DSS
V
GSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Typical
40
±20
±40
0.3
1.0
0.3
0.35
-55 ~ 150
-55 ~ 150
375
Unit
V
V
V
A
A
A
W
℃
℃
℃
/W
(∗) Pulse width limited by safe operating area
2010/12/17
Ver.3
Page 2
SPN6435
Dual N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25
℃
Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS
=0V,I
D
=150uA
V
GS(th)
V
DS
=V
GS
,I
D
=250uA
I
GSS
I
DSS
V
DS
=0V,V
GS
=±20V
V
DS
=32V,V
GS
=0V
V
DS
=32V,V
GS
=0V
T
J
=125℃
V
GS
=10V,I
D
=0.3A
V
GS
= 5V,I
D
=0.2A
V
GS
= 2.5V,I
D
=0.02A
V
DS
= 10 V, I
D
= 0.5 A
40
1.0
1.3
±100
1
10
2.8
3.2
7.5
0.6
0.85
4.0
5.0
10.0
1.5
V
nA
uA
Symbol
Conditions
Min.
Typ
Max.
Unit
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
R
DS(on)
Gfs(1)
Ω
S
V
V
SD
(1) V
GS
= 0 V, I
S
= 0.12A
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V, I
D
= 1 A,
V
GS
= 5 V
1.4
0.8
0.5
43
20
6
5
15
7
8
2.0
nC
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
pF
V
DD
= 30 V, I
D
= 0.5 A
R
G
= 4.7Ω V
GS
= 4.5 V
ns
(1) Pulsed: Pulse duration = 300
μs,
duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
2010/12/17
Ver.3
Page 3
stm32/stm8
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
