UTRON
Rev. 1.1
UT62L2568(I)
256K X 8 BIT LOW POWER CMOS SRAM
REVISION HISTORY
REVISION
Preliminary Rev. 0.1
Rev. 1.0
DESCRIPTION
Original.
1.Add fast access time : 100ns
2.Revise “FEATURES” Operating :
40/25 40/35/25mA (Icc max.)
3.Revise “FEATURES” Standby :
L -version : T
A
=0
℃
~50
℃
,20 uA(max.) 20 uA(TYP.)
LL-version : T
A
=0
℃
~50
℃
, 3 uA(max.)
2 uA(TYP.)
4.Revise 36 TFBGA Outline Dimension ball size :
0.3mm 0.35mm
1.Revised “FEATURES” Operating current :
40/35/25mA(I
CC
max) 20/18/15mA (I
CC
typ.)
2.TRUTH TABLE & DC ELECTRICAL : Delete I
SB2
3.Revised V
TERM
: -0.5 to Vcc+0.3V
-0.5 to 4.6V
4.Added V
OH
: 2.7V at Vcc=3.0V
5.Revised DC (I
CC
max) 45/35/25mA 35/30/25mA
(I
CC
typ.) 30/25/20mA 20/18/15mA
6.Add under/overshoot range of V
IL
& V
IH
7.Revised AC t
OHZ
*@100ns (max): 35ns 30ns
t
WHZ
*(max) :30/30/40 20/25/30ns
8.Revised “Data retention Characteristics” :
I
DR
-LL (Typ.) : NA 1uA, I
DR
-L (Typ.) : NA 10uA
I
DR
-LL (Max.) : 25uA 6uA
t
R
(min) : 5ns ”t
RC
”
9.Add order information for lead free product
Release Date
Nov 28, 2001
Aug 30, 2002
Rev. 1.1
Apr 28, 2003
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
P80082
1
UTRON
Rev. 1.1
UT62L2568(I)
256K X 8 BIT LOW POWER CMOS SRAM
GENERAL DESCRIPTION
The UT62L2568(I) is a 2,097,152-bit low power
CMOS static random access memory organized as
262,144 words by 8 bits. It is fabricated using high
performance, high reliability CMOS technology.
The UT62L2568(I) is designed for very low power
system applications. It is particularly well suited for
battery back-up nonvolatile memory applications.
It operates from a wide range of 2.5V~ 3.6V supply
voltage. Easy memory expansion is provided by
using two chip enable input ( CE ,CE2). And all
inputs and three-state outputs are fully TTL
compatible.
FEATURES
Fast access time :
55ns(max.) for Vcc=2.7V~3.6V
70/100ns(max.) for Vcc=2.5V~3.6V
CMOS low power operation
Operating : 20/18/15mA (TYP.)
Standby : 20 uA(TYP.) L -version
2 uA(TYP.) LL-version
Single 2.5V~3.6V power supply
Operating temperature:
Industrial : -40
℃
~85
℃
All TTL compatible inputs and outputs
Fully static operation
Three state outputs
Data retention voltage: 1.5V (min)
Package : 32-pin 8mm x 20mm TSOP-
Ⅰ
32-pin 8mm x 13.4mm STSOP
36-pin 6mm × 8mm TFBGA
FUNCTIONAL BLOCK DIAGRAM
256K
×
8
MEMORY
ARRAY
A0-A17
DECODER
Vcc
Vss
I/O1-I/O8
I/O DATA
CIRCUIT
COLUMN I/O
CE
CE2
OE
WE
CONTROL
CIRCUIT
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
P80082
2
UTRON
Rev. 1.1
UT62L2568(I)
256K X 8 BIT LOW POWER CMOS SRAM
A11
A9
A8
A13
WE
CE2
A15
Vcc
A17
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
PIN CONFIGURATION
OE
A10
CE
I/O8
I/O7
I/O6
I/O5
I/O4
Vss
I/O3
I/O2
I/O1
A0
A1
A2
A3
A
B
C
D
E
F
G
H
A0
I/O 5
I/O 6
Vss
Vcc
I/O 7
I/O 8
A9
A1
A2
C E2
WE
A3
A4
A5
A6
A7
A8
I/O 1
I/O 2
Vcc
Vss
NC
UT62L2568(I)
NC
OE
A17
A16
A12
A15
A13
I/O 3
I/O 4
A14
CE
A11
A10
TSOP-1 / STSOP
1
2
3
4
5
6
TFBG A
PIN DESCRIPTION
SYMBOL
A0 - A17
I/O1 - I/O8
CE ,CE2
WE
OE
V
CC
V
SS
NC
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Inputs
Write Enable Input
Output Enable Input
Power Supply
Ground
No Connection
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
P80082
3
UTRON
Rev. 1.1
UT62L2568(I)
256K X 8 BIT LOW POWER CMOS SRAM
TRUTH TABLE
MODE
Standby
Output Disable
Read
Write
Note:
CE
H
X
L
L
L
CE2
X
L
H
H
H
OE
X
X
H
L
X
WE
X
X
H
H
L
I/O OPERATION SUPPLY CURRENT
High - Z
High - Z
High - Z
D
OUT
D
IN
I
SB
,
I
SB1
I
SB
,
I
SB1
I
CC
,
I
CC1,
I
CC2
I
CC
,
I
CC1,
I
CC2
I
CC
,
I
CC1,
I
CC2
H = V
IH
, L=V
IL
, X = Don't care.
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
Terminal Voltage with Respect to V
SS
Operating Temperature
Industrial
Storage Temperature
Power Dissipation
DC Output Current
Soldering Temperature (under 10 secs)
SYMBOL
V
TERM
T
A
T
STG
P
D
I
OUT
Tsolder
RATING
-0.5 to 4.6
-40 to 85
-65 to 150
1
50
260
UNIT
V
℃
℃
W
mA
℃
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections
of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device
reliability.
DC ELECTRICAL CHARACTERISTICS
(V
CC
= 2.5V~3.6V, T
A
= -40
℃
to 85
℃
)
PARAMETER
Power Voltage
SYMBOL
TEST CONDITION
V
CC
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
V
IH
＊
2
V
IL
I
LI
I
LO
V
OH
V
OL
I
CC
＊
1
MIN.
2.7
55
70/100
2.5
2.2
- 0.2
-1
V
SS
≦
V
IN
≦
V
CC
-1
V
SS
≦
V
I/O
≦
V
CC,
Output Disabled
I
OH
= - 1mA (I
OH
= -0.5mA when Vcc<2.7V)
2.2
-
I
OL
= 2.1mA
-
Cycle time=Min.100% duty,
55
-
70
CE
=V
IL
and CE2 = V
IH
,
-
100
I
I/O
=0mA
TCycle=
1µs
TCycle=
500ns
-L
-LL
-
-
Operating Current
I
CC1
I
CC2
100%duty, I
I/O=
0mA,
CE
≦
0.2V
and CE2
≧
Vcc-0.2V, other pins
at 0.2V or Vcc-0.2V
TYP. MAX. UNIT
3.0
3.6
V
3.0
3.6
V
-
Vcc+0.3 V
-
0.6
V
-
1
µA
-
1
µA
2.7
-
V
-
0.4
V
20
35
mA
18
30
mA
15
25
mA
4
5
mA
8
0.3
20
2
10
0.5
80
10
mA
mA
µA
µA
Standby Current (TTL)
Standby Current (CMOS)
I
SB
I
SB1
CE
=V
IH
or CE2 = V
IL
CE
=V
CC
-0.2V or CE2=0.2V,
other pins at 0.2V or Vcc-0.2V
-
-
-
Notes:
1. Overshoot : Vcc+3.0v for pulse width less than 10ns.
2. Undershoot : Vss-3.0v for pulse width less than 10ns.
3. Overshoot and Undershoot are sampled, not 100% tested.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
P80082
4
UTRON
Rev. 1.1
UT62L2568(I)
256K X 8 BIT LOW POWER CMOS SRAM
CAPACITANCE
(T
A
=25
℃
, f=1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
6
8
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
AC TEST CONDITIONS
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Reference Levels
Output Load
0V to 3V
5ns
1.5V
C
L
= 30pF+1TTL, I
OH
= -1mA, I
OL
= 2.1mA
AC ELECTRICAL CHARACTERISTICS
( T
A
= - 40
℃
to 85
℃
)
(1) READ CYCLE
PARAMETER
SYMBOL
UT62L2568(I)-55
UT62L2568(I)-70 UT62L2568(I)-100
UNIT
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Chip Enable to Output in Low Z
Output Enable to Output in Low Z
Chip Disable to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
t
RC
t
AA
t
ACE
t
OE
t
CLZ*
t
OLZ*
t
CHZ*
t
OHZ*
t
OH
V
CC
= 2.7V~3.6V V
CC
= 2.5V~3.6V V
CC
= 2.5V~3.6V
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
55
-
70
-
100
-
-
55
-
70
-
100
-
55
-
70
-
100
-
30
-
35
-
50
10
-
10
-
10
-
5
-
5
-
5
-
-
20
-
25
-
30
-
20
-
25
-
30
10
-
10
-
10
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
(2) WRITE CYCLE
PARAMETER
SYMBOL
UT62L2568(I)-55
UT62L2568(I)-70 UT62L2568(I)-100
UNIT
Write Cycle Time
Address Valid to End of Write
Chip Enable to End of Write
Address Set-up Time
Write Pulse Width
Write Recovery Time
Data to Write Time Overlap
Data Hold from End of Write Time
Output Active from End of Write
Write to Output in High Z
t
WC
t
AW
t
CW
t
AS
t
WP
t
WR
t
DW
t
DH
t
OW*
t
WHZ*
V
CC
= 2.7V~3.6V V
CC
= 2.5V~3.6V V
CC
= 2.5V~3.6V
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
55
-
70
-
100
-
50
-
60
-
80
-
50
-
60
-
80
-
0
-
0
-
0
-
45
-
55
-
70
-
0
-
0
-
0
-
25
-
30
-
40
-
0
-
0
-
0
-
5
-
5
-
5
-
-
20
-
25
-
30
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
*These parameters are guaranteed by device characterization, but not production tested.
UTRON TECHNOLOGY INC.
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882
FAX: 886-3-5777919
P80082
5
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