JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Transistors
FMMDT5451
TRANSISTOR
WBFBP-06C
(2×2×0.5)
unit: mm
DESCRIPTION
PNP and NPN Epitaxial Silicon Transistor
FEATURES
Complementary Pair
One 5551-Type NPN, One 5401-Type PNP
Ultra-Small Surface Mount Package
APPLICATION
Ideal for Medium Power Amplification and Switching
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
MARKING: KNM
1
KNM
E1,B1,C1=NPN 5551 Section
E2,B2,C2=PNP 5401 Section
5551 MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
RθJA
T
J
T
stg
Parameter
Value
180
160
6
0.2
0.15
625
150
-55-150
Units
V
V
V
A
W
K/W
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature range
℃
℃
5401 MAXIMUM RATINGS* T
A
=25℃ unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
RθJA
T
J
T
stg
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature range
Parameter
Value
-160
-150
-5
-0.2
Units
V
V
V
A
0.15
625
150
-55-150
W
K/W
℃
℃
5551
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
（
1
）
h
FE
（
2
）
h
FE
（
3
）
Test
unless
otherwise
MIN
180
160
6
specified）
TYP
MAX
UNIT
V
V
V
50
50
conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Ic=100
µ
A,I
E
=0
Ic=1mA, I
B
=0
I
E
= 10
µ
A, I
C
=0
V
CB
= 120V
V
EB
= 4V, I
C
=0
V
CE
= 5 V,
V
CE
= 5 V,
V
CE
= 5 V,
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
E
=0
n
A
nA
80
80
30
0.15
0.2
1
1
100
300
6
8
V
V
MHz
pF
dB
250
DC current gain
Collector-emitter saturation voltage
V
CEsat
V
BEsat
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
= 10 mA, I
B
= 1 mA
I
C
= 50 mA, I
B
= 5 mA
V
CE
=10V,I
C
=10mA,,f=100MHz
V
CB
=10V,I
E
=0,f=1MHz
V
CE
=5V,I
c
=0.2mA,
f=1KHZ,Rg=1kΩ
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
f
T
C
ob
NF
5401 ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
f
T
C
ob
NF
Test
unless
conditions
otherwise
specified)
MIN
-160
-150
-5
-0.05
-0.05
50
60
50
-0.2
-0.5
-1
-1
100
300
6
V
V
V
V
MHz
pF
240
TYP
MAX
UNIT
V
V
V
µA
µA
I
C
=-100µA , I
E
=0
I
C
= -1mA ,
I
E
=-10µA,
I
B
=0
I
C
=0
V
CB
=-120 V , I
E
=0
V
EB
=-3V ,
V
CE
=-5 V,
V
CE
=-5 V,
V
CE
=-5 V,
I
C
=0
I
C
= -1mA
I
C
= -10mA
I
C
= -50mA
I
C
=-10 mA, I
B
=-1mA
I
C
=-50 mA, I
B
=-5mA
I
C
= -10 mA, I
B
=-1mA
I
C
= -50 mA, I
B
=-5mA
V
CE
= -10V, I
C
= -10mA
f = 100MHz
V
CB
=-10V, I
E
= 0,f=1MHz
V
CE
= -5.0V, I
C
= -200µA,
R
S
= 10Ω,f = 1.0kHz
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Noise Figure
8.0
dB
Microchip MCU
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