HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6727
Issued Date : 1998.07.01
Revised Date : 2002.01.07
Page No. : 1/4
HLB124E
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HLB124E is designed for high voltage, high speed switching inductive
circuits, and amplifier applications.
Features
•
High Speed Switching
•
Low Saturation Voltage
•
High Reliability
TO-220
Absolute Maximum Ratings
(Ta=25°C)
•
Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150
°C
Junction Temperature ................................................................................................................ +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 35 W
•
Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage ................................................................................................. 600 V
BVCEO Collector to Emitter Voltage .............................................................................................. 400 V
BVEBO Emitter to Base Voltage ....................................................................................................... 8 V
IC Collector Current (DC)................................................................................................................... 2 A
IC Collector Current (Pulse)............................................................................................................... 4 A
IB Base Current (DC)..........................................................................................................................1 A
IB Base Current (Pulse) ..................................................................................................................... 2 A
Characteristics
(Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
*hFE2
*hFE3
fT
Min.
600
400
8
-
-
-
-
-
-
10
10
6
15
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
0.3
0.8
0.9
1.2
40
-
-
-
Unit
V
V
V
uA
uA
V
V
V
V
Test Conditions
IC=1mA
IC=10mA
IE=1mA
VCB=600V
VEB=9V, IC=0
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
IC=0.1A, IB=10mA
IC=0.3A, IB=30mA
VCE=5V, IC=0.3A
VCE=5V, IC=0.5A
VCE=5V, IC=1A
VCE=10V, IC=0.3, f=1MHz
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
MHz
Classification of hFE1
Rank
Range
HLB124E
B1
10~17
B2
13~22
B3
18~27
B4
23~32
B5
28~37
B6
33~40
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
100000
Spec. No. : HE6727
Issued Date : 1998.07.01
Revised Date : 2002.01.07
Page No. : 2/4
Saturation Voltage & Collector Current
125 C
o
75 C
o
25 C
o
Saturation Voltage (mV)
10000
o
75 C
1000
hFE
10
125 C
100
o
25 C
o
hFE @ V
CE
=5V
1
1
10
100
1000
10000
10
1
10
100
V
CE(sat)
@ I
C
=10I
B
1000
10000
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Saturation Voltage & Collector Current
10000
On Voltage & Collector Current
1000
V
CE
=5V
Saturation Voltage (mV)
75 C
1000
25 C
o
o
125 C
V
BE(sat)
@ I
C
=10I
B
100
1
10
100
1000
10000
o
On Voltage (mV)
100
1
10
100
1000
10000
Collector Current I
C
(mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
Switching Time & Collector Current
10
V
CC
=100V, I
C
=5I
B1
=5I
B2
Switching Time (us)
Capacitance (Pf)
Cob
10
Ton
1
Tstg
Tf
1
1
10
100
0.1
0.1
1
10
Reverse Biased Voltage (V)
Collector Current (A)
HLB124E
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6727
Issued Date : 1998.07.01
Revised Date : 2002.01.07
Page No. : 3/4
Safe Operating Area
10000
Collector Current (mA)
1000
P
T
=1 ms
100
P
T
=100 ms
P
T
=1 s
10
1
1
10
100
1000
Forward Voltage (V)
HLB124E
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
A
D
B
E
C
HSMC Logo
Part Number
Date Code
Spec. No. : HE6727
Issued Date : 1998.07.01
Revised Date : 2002.01.07
Page No. : 4/4
Product Series
Rank
H
I
G
4
P
M
3
2
1
N
K
Style: Pin 1.Base 2.Collector 3.Emitter
O
3-Lead TO-220AB Plastic Package
HSMC Package Code: E
*: Typical
DIM
A
B
C
D
E
G
H
Inches
Min.
Max.
0.2197
0.2949
0.3299
0.3504
0.1732
0.185
0.0453
0.0547
0.0138
0.0236
0.3803
0.4047
-
*0.6398
Millimeters
Min.
Max.
5.58
7.49
8.38
8.90
4.40
4.70
1.15
1.39
0.35
0.60
9.66
10.28
-
*16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
-
*0.1508
0.0295
0.0374
0.0449
0.0551
-
*0.1000
0.5000
0.5618
0.5701
0.6248
Millimeters
Min.
Max.
-
*3.83
0.75
0.95
1.14
1.40
-
*2.54
12.70
14.27
14.48
15.87
Notes:
1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
•
Lead: 42 Alloy; solder plating
•
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HLB124E
HSMC Product Specification
LED专区
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
