HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HI200201
Issued Date : 2002.02.01
Revised Date : 2005.07.13
Page No. : 1/4
HSB1386I
LOW FREQUENCY TRANSISTOR (-20V, -4A)
Features
•
Low V
CE(sat)
.
V
CE(sat)
=-0.55V(Typ.) (I
C
/I
B
=-4A/-0.1A)
•
Excellent DC current gain characteristics.
TO-251
Structure
Epitaxial planar type PNP silicon transistor
Absolute Maximum Ratings
(T
A
=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
j
T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation (T
C
=25
o
C)
Junction Temperature
Storage Temperature
Parameter
Limits
-30
-20
-6
-4
-10
20
150
-55~+150
Unit
V
V
V
A
A(Pulse)*
W
o
o
C
C
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
*h
FE
fT
Cob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter B reakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Min. Typ. Max. Unit
-30
-20
-6
-
-
-
82
-
-
-
-
-
-
110
30
-0.5
-0.5
-1
580
-
-
pF
uA
uA
V
-
-
-
-
V
V
Test Conditions
I
C
=-50uA
I
C
=-1mA
I
C
=-50uA
V
CB
=-20V
V
EB
=-5V
I
C
/I
B
=-4A/-0.1A
V
CE
=-2V, I
C
=-0.5A
MHz V
CE
=-6V, I
E
=50mA, f=30MHz
V
CB
=-20V, I
E
=0A, f=1MHz
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Classification Of hFE
Rank
Range
P
82-180
Q
120-270
R
180-390
E
370-580
HSB1386I
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
1000
Spec. No. : HI200201
Issued Date : 2002.02.01
Revised Date : 2005.07.13
Page No. : 2/4
Saturation Voltage & Collector Current
Saturation Voltage (mV)
100
V
CE(sat)
@ I
C
=20I
B
hFE
hFE @ V
CE
=2V
V
CE(sat)
@ I
C
=40I
B
10
100
1
10
100
1000
10000
1
1
10
100
1000
10000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
1000
Capacitance & Reverse-Biased Voltage
Saturation Voltage (mV)
1000
Capacitance (pF)
100
Cob
V
BE(sat)
@ I
C
=20I
B
100
1
10
100
1000
10000
10
0.1
1
10
100
Collector Current-I
C
(mA)
Reverse Biased Voltage (V)
Power Derating
25
20
PD(W) , Power Dissipation
15
10
5
0
0
20
40
60
80
100
o
Tc( C) , Ambient Temperature
120
140
HSB1386I
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-251 Dimension
A
Tab
Spec. No. : HI200201
Issued Date : 2002.02.01
Revised Date : 2005.07.13
Page No. : 3/4
M
F
a1
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
C
G
Date Code
SB
1 3 8 6 I
Control Code
Note: Green label is used for pb-free packing
1
2
3
Pin Style: 1.Base 2/Tab.Collector 3.Emitter
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
F
G
H1
K
K1
L
M
a1
a2
Min.
6.35
4.80
1.30
5.40
6.75
0.50
0.40
0.90
2.20
0.40
-
Max.
6.80
5.50
1.70
6.25
8.00
0.90
0.90
1.50
2.40
0.65
*2.30
L
K
K1
H1
a1
*: Typical, Unit: mm
a2
a2
3-Lead TO-251
Plastic Package
HSMC Package Code: I
A
B
C
D
a1
E
G
Marking:
M
F
y1
a1
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
SB
1 3 8 6 I
Control Code
I
H
y1
y1
Date Code
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2.Collector 3.Emitter
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
K
K1
H1
a2
y2
a2
y2
a1
DIM
A
B
C
D
E
F
G
H
H1
I
J
K
K1
M
a1
a2
y1
y2
Min.
6.40
-
5.04
-
0.40
0.50
5.90
-
-
-
-
-
-
2.20
0.40
2.10
-
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
*1.80
*9.30
*16.10
*0.80
0.96
*0.76
2.40
0.60
2.50
5
o
3
o
3-Lead TO-251
Plastic Package
HSMC Package Code: I
*: Typical, Unit: mm
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSB1386I
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10
o
C~35
o
C Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
t
P
T
P
Ramp-up
T
L
Ts
max
Temperature
t
L
Spec. No. : HI200201
Issued Date : 2002.02.01
Revised Date : 2005.07.13
Page No. : 4/4
Critical Zone
T
L
to T
P
Ts
min
t
S
Preheat
Ramp-down
25
t 25
o
C to Peak
Time
Profile Feature
Average ramp-up rate (T
L
to T
P
)
Preheat
- Temperature Min (Ts
min
)
- Temperature Max (Ts
max
)
- Time (min to max) (ts)
Tsmax to T
L
- Ramp-up Rate
Time maintained above:
- Temperature (T
L
)
- Time (t
L
)
Peak Temperature (T
P
)
Time within 5
o
C of actual Peak
Temperature (t
P
)
Ramp-down Rate
Time 25
o
C to Peak Temperature
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
Sn-Pb Eutectic Assembly
<3
o
C/sec
100
o
C
150
o
C
60~120 sec
<3
o
C/sec
183
o
C
60~150 sec
240
o
C +0/-5
o
C
10~30 sec
<6
o
C/sec
<6 minutes
Pb-Free Assembly
<3
o
C/sec
150
o
C
200
o
C
60~180 sec
<3
o
C/sec
217
o
C
60~150 sec
260
o
C +0/-5
o
C
20~40 sec
<6
o
C/sec
<8 minutes
Peak temperature
245
o
C
±5
o
C
260
o
C +0/-5
o
C
Dipping time
5sec
±1sec
5sec
±1sec
HSB1386I
HSMC Product Specification
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
