Collector to Base Voltage ........................................................................................................................... 25 V
V
CEO
Collector to Emitter Voltage ........................................................................................................................ 20 V
V
EBO
Emitter to Base Voltage ................................................................................................................................ 5 V
I
C
Collector Current ............................................................................................................................................... 1 A
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)
V
BE(on)
*h
FE
f
T
Cob
Min.
25
20
5
-
-
-
85
-
-
Typ.
-
-
-
-
-
-
-
190
22
Max.
-
-
-
1
500
1
400
-
-
MHz
pF
Unit
V
V
V
uA
mV
V
I
C
=10uA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=10uA, I
C
=0
V
CB
=20V, I
E
=0
I
C
=0.8A, I
B
=80mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=500mA
V
CE
=2V, I
C
=500mA
V
CB
=10V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification of hFE
Rank
Range
B
85-170
C
120-240
D
200-400
HMBT468
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
1000
Spec. No. : HN200204
Issued Date : 2001.07.01
Revised Date : 2004.09.08
Page No. : 2/5
Saturation Voltage & Collector Current
Saturation Voltage (mV)
100
V
CE
=2V
hFE
100
10
V
CE(s at)
@ I
C
=10I
B
10
0.1
1
10
100
1000
10000
1
0.1
1
10
100
1000
10000
Collector Current (mA)
Collector Current (mA)
On Voltage & Collector Current
10000
1000
Cutoff Frequency & Ic
Cutoff Frequency (MHz)
On Voltage (mV)
V
CE
=2V
1000
V
BE(on)
@ V
CE
=2V
100
100
0.1
1
10
100
1000
10000
10
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
IR Reflow Profile
260
240
220
200
10+/-2 sec
Capacitance (pF)
Temperature( C)
180
160
140
120
100
80
60
40
20
150+/-30
40+/-20 sec
10
Cob
o
1
0.1
1
10
100
1000
0
0
50
100
150
200
250
300
Reverse Biased Voltage (V)
Time(sec)
HMBT468
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HN200204
Issued Date : 2001.07.01
Revised Date : 2004.09.08
Page No. : 3/5
Temperature Profile for Dip Soldering
300
10+/-2 sec
250
Temperature( C)
200
o
150
100
120+/-20 sec
50
0
0
50
100
150
200
250
300
350
Time(sec)
HMBT468
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
A
L
Spec. No. : HN200204
Issued Date : 2001.07.01
Revised Date : 2004.09.08
Page No. : 4/5
4 6 8
3
Pb Free Mark
B S
1
2
Pb-Free: " "
(Note)
Normal: None
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
V
G
DIM
A
B
C
D
G
H
J
K
L
S
V
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
*: Typical, Unit: mm
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
