NPN Triple Diffused Planar Type High Voltage Transistor
Description
The HLB122I is a medium power transistor designed for use in switching
applications.
Features
•
High breakdown voltage
•
Low collector saturation voltage
•
Fast switching speed
TO-251
Absolute Maximum Ratings
(T
A
=25°C)
•
Maximum Temperatures
Storage Temperature ........................................................................................................................... -55 ~ +150
°C
Junction Temperature .................................................................................................................................... +150
°C
•
Maximum Power Dissipation
Total Power Dissipation (T
C
=25°C) .................................................................................................................... 20 W
•
Maximum Voltages and Currents
BV
CBO
Collector to Base Voltage....................................................................................................................... 600 V
BV
CEO
Collector to Emitter Voltage.................................................................................................................... 400 V
BV
EBO
Emitter to Base Voltage.............................................................................................................................. 6 V
I
C
Collector Current (DC) ............................................................................................................................... 800 mA
I
C
Collector Current (Pulse).......................................................................................................................... 1600 mA
I
B
Base Current (DC) ...................................................................................................................................... 100 mA
I
B
Base Current (Pulse).................................................................................................................................. 200 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
CEO
I
EBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)
*h
FE1
*h
FE2
tf
Min.
600
400
6
-
-
-
-
-
-
10
10
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
10
10
10
400
800
1
40
-
0.6
uS
Unit
V
V
V
uA
uA
uA
mV
mV
V
I
C
=100uA
I
C
=10mA
I
E
=10uA
V
CB
=600V
V
CE
=400V
V
EB
=6V
I
C
=100mA, I
B
=20mA
I
C
=300mA, I
B
=60mA
I
C
=100mA, I
B
=20mA
V
CE
=10V, I
C
=0.1A
V
CE
=10V, I
C
=0.5A
V
CC
=100V, I
C
=0.3A, I
B1
=-I
B2
=0.06A
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification of hFE1
Rank
Range
HLB122I
B1
10-17
B2
13-22
B3
18-27
B4
23-32
B5
28-37
B6
33-40
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
10000
Spec. No. : HE9030
Issued Date : 1998.07.01
Revised Date : 2005.07.13
Page No. : 2/5
Saturation Voltage & Collector Current
125 C
o
75 C
o
Saturation Voltage (mV)
1000
75 C
125 C
o
o
o
25 C
o
hFE
10
100
25 C
hFE @ VCE=10V
10
V
CE(sat)
@ I
C
=5I
B
1
1
10
100
1000
1
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
Saturation Voltage & Collector Current
10000
V
BE(s at)
@ I
C
=5I
B
ON Voltage & Collector Current
1000
75 C
1000
25 C
o
o
125 C
o
100
1
10
100
1000
ON Voltage-V
BE(on)
(mV)
Saturation Voltage (mV)
V
BE(on)
@ V
CE
=10V
100
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
Safe Operating Area
10000
Capacitance-Cob (pF)
Collector Current (mA)
1000
10
100
P
T
=1ms
P
T
=100ms
P
T
=1s
10
1
0.1
1
10
100
1
1
10
100
1000
Reverse-Biased Voltage (V)
Forward-Biased Voltage (V)
HLB122I
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE9030
Issued Date : 1998.07.01
Revised Date : 2005.07.13
Page No. : 3/5
Switching Time & Collector Current
10
V
CC
=45V, I
C
=5I
B1
=-5I
B2
Switching Time (us)
..
.
Tstg
1
Ton
Tf
0.1
100
1000
Collector Current (mA)
HLB122I
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-251 Dimension
A
Tab
Spec. No. : HE9030
Issued Date : 1998.07.01
Revised Date : 2005.07.13
Page No. : 4/5
M
F
a1
Marking:
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
L B
C
G
Date Code
1 2 2 I
Control Code
Note: Green label is used for pb-free packing
1
2
3
Pin Style: 1.Base 2/Tab.Collector 3.Emitter
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
DIM
A
C
F
G
H1
K
K1
L
M
a1
a2
Min.
6.35
4.80
1.30
5.40
6.75
0.50
0.40
0.90
2.20
0.40
-
Max.
6.80
5.50
1.70
6.25
8.00
0.90
0.90
1.50
2.40
0.65
*2.30
L
K
K1
H1
a1
*: Typical, Unit: mm
a2
a2
3-Lead TO-251
Plastic Package
HSMC Package Code: I
A
B
C
D
a1
E
G
Marking:
M
F
y1
a1
Pb Free Mark
Pb-Free: "
.
"
(Note)
H
Normal: None
L B
1 2 2 I
Date Code
Control Code
I
H
y1
y1
Note: Green label is used for pb-free packing
Pin Style: 1.Base 2.Collector 3.Emitter
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
J
K
K1
H1
a2
y2
a2
y2
a1
DIM
A
B
C
D
E
F
G
H
H1
I
J
K
K1
M
a1
a2
y1
y2
Min.
6.40
-
5.04
-
0.40
0.50
5.90
-
-
-
-
-
-
2.20
0.40
2.10
-
-
Max.
6.80
6.00
5.64
*4.34
0.80
0.90
6.30
*1.80
*9.30
*16.10
*0.80
0.96
*0.76
2.40
0.60
2.50
5
o
3
o
3-Lead TO-251
Plastic Package
HSMC Package Code: I
*: Typical, Unit: mm
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
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