HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.28
Page No. : 1/3
H2N6520
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The H2N6520 is designed for general purpose applications requiring high
breakdown voltages.
Features
•
High Collector-Emitter Breakdown Voltage
•
Low Collector-Emitter Saturation Voltage
•
The H2N6520 is complementary to H2N6517
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature ....................................................................................................... -55 ~ +150
°C
Junction Temperature ............................................................................................... +150
°C
Maximum
•
Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)............................................................................................ 625 mW
•
Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage.................................................................................................. -350 V
VCEO Collector to Emitter Voltage............................................................................................... -350 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current ................................................................................................................. -500 mA
IB Base Current ....................................................................................................................... -250 mA
Characteristics
(Ta=25°C,
*Pulse Test : Pulse Width
≤380us,
Duty Cycle≤2%
)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
*VCE(sat)4
VBE(on)
*VBE(sat)1
*VBE(sat)2
*VBE(sat)3
*hFE1
*hFE2
*hFE3
*hFE4
*hFE5
fT
Cob
Min.
-350
-350
-5
-
-
-
-
-
-
-
-
-
-
20
30
30
20
15
40
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-50
-50
-0.30
-0.35
-0.50
-1
2
-0.75
-0.85
-0.90
-
-
200
200
-
200
6
Unit
V
V
V
nA
nA
V
V
V
V
V
V
V
V
Test Conditions
IC=-100uA, IE=0
IC=-1mA, IB=0
IE=-10uA, IC=0
VCB=-250V, IE=0
VEB=-4V, IC=0
IC=-10mA, IB=-1mA
IC=-20mA, IB=-2mA
IC=-30mA, IB=-3mA
IC=-50mA, IB=-5mA
IC=-100mA, VCE=-10V
IC=-10mA, IB=-1mA
IC=-20mA, IB=-2mA
IC=-30mA, IB=-3mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
VCE=-10V, IC=-50mA
VCE=-10V, IC=-100mA
IC=-10mA, VCE=-20V, f=20MHz
VCB=-20V, f=1MHz, IE=0
HSMC Product Specification
MHz
pF
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100
V
CE
=10V
10000
100000
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.28
Page No. : 2/3
Saturation Voltage & Collector Current
Saturation Voltage (mV)
1000
V
BE(sat)
@ I
C
=10I
B
100
V
CE(sat)
@ I
C
=10I
B
hFE
10
10
1
0.01
0.1
1
10
100
1000
1
0.001
0.01
0.1
1
10
100
1000
Collector Current (mA)
Collector Current (mA)
On Voltage & Collector CurrentT
10000
Cutoff Frequency & Collector Current
100
1000
V
BE(ON)
@ V
CE
=10V
100
0.01
Cutoff Frequency
On Voltage (mV)
V
CE
=20V
10
0.1
1
10
100
1000
1
10
100
Collector Current (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100
700
600
PD-Ta
Power Dissipation-PD(mW)
500
400
300
200
100
0
Capacitance (pF)
10
Cob
1
0.1
1
10
100
0
20
40
60
80
100
o
120
140
160
Reverse-Biased Voltage (V)
Ambient Temperature-Ta( C)
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-92 Dimension
A
B
1 2
3
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000.09.28
Page No. : 3/3
α
2
Marking :
HSMC Logo
Part Number
Date Code
Rank
Product Series
α
3
Laser Mark
HSMC Logo
Product Series
C
D
Part Number
H
I
E
F
G
Ink Mark
Style : Pin 1.Emitter 2.Base 3.Collector
α
1
3-Lead TO-92 Plastic Package
HSMC Package Code : A
*:Typical
DIM
A
B
C
D
E
F
Inches
Min.
Max.
0.1704
0.1902
0.1704
0.1902
0.5000
-
0.0142
0.0220
-
*0.0500
0.1323
0.1480
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
-
0.36
0.56
-
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142
0.0220
-
*0.1000
-
*0.0500
-
*5°
-
*2°
-
*2°
Millimeters
Min.
Max.
0.36
0.56
-
*2.54
-
*1.27
-
*5°
-
*2°
-
*2°
Notes :
1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material :
•
Lead : 42 Alloy ; solder plating
•
Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory :
•
Head Office
(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
•
Factory 1 :
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
•
Factory 2 :
No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
HSMC Product Specification
微控制器 MCU
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