The HBC848 is designed for switching and AF amplifier amplification suitable for
automatic insertion in thick and thin-film circuits.
SOT-23
Absolute Maximum Ratings
•
Maximum Temperatures
Storage Temperature.......................................................................................................................... -55 to +150
Collector to Base Voltage........................................................................................................................... 30 V
V
CEO
Collector to Emitter Voltage ....................................................................................................................... 30 V
V
EBO
Emitter to Base Voltage................................................................................................................................ 5 V
I
C
Collector Current ........................................................................................................................................ 100 mA
Electrical Characteristics
(T
A
=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
*V
CE(sat)1
*V
CE(sat)2
*V
BE(sat)1
*V
BE(sat)2
V
BE(on)1
V
BE(on)2
*h
FE
f
T
Cob
Min.
30
30
5
-
-
-
-
-
580
-
200
-
-
Typ.
-
-
-
-
90
200
700
900
-
-
-
300
3.5
Max.
-
-
-
15
250
600
-
-
700
770
450
-
6
MHz
pF
Unit
V
V
V
nA
mV
mV
mV
mV
mV
mV
I
C
=100uA
I
C
=1mA
I
E
=10uA
V
CB
=30V
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
V
CE
=5V, I
C
=2mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=2mA
V
CE
=5V, I
C
=10mA
V
CB
=10V, f=1MHz, I
E
=0
*Pulse Test: Pulse Width
≤380us,
Duty Cycle≤2%
Test Conditions
Classification Of hFE
Rank(Marking)
hFE
B(8CB)
200-450
HBC848
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
1000
100000
Spec. No. : HE6843
Issued Date : 1994.07.29
Revised Date : 2008.01.30
Page No. : 2/4
Saturation Voltage & Collector Current
10000
Current Gain-hFE
100
hFE @ V
CE
=5V
Saturation Voltage (mV)
1000
V
BE(sat)
@ I
C
=20I
B
10
V
CE(sat)
@ I
C
=20I
B
100
1
0.1
1
10
100
1000
10
0.1
1
10
100
1000
Collector Current-I
C
(mA)
Collector Current-I
C
(mA)
On Voltage & Collector Current
10000
10
Capacitance & Reverse-Biased Voltage
On Voltage (mV)
Capacitance (pF)
Cob
1
1000
V
BE(on)
@ V
CE
=5V
100
0.1
1
10
100
1000
Collector Current-I
C
(mA)
0.1
0.1
1
10
100
Reverse-Biased Voltage (V)
Cutoff Frequency & Collector Current
1000
10000
Safe Operating Area
PT=1ms
1000
PT=100ms
PT=1s
100
V
CE
=5V
100
Collector Current-I
C
(mA)
100
Cutoff Frequence (MHz)
10
10
1
10
1
1
10
100
Collector Current-I
C
(mA)
Forward Voltage-V
CE
(V)
HBC848
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
SOT-23 Dimension
Marking:
A
L
3
Spec. No. : HE6843
Issued Date : 1994.07.29
Revised Date : 2008.01.30
Page No. : 3/4
Marking
Code
1 K
B S
Pb Free
Mark
Note: Pb-free product can distinguish by the green
label or the extra description on the right
side of the label.
Pin Style: 1.Base 2.Emitter 3.Collector
1
2
V
G
DIM
A
B
C
D
G
H
J
K
L
S
V
Min.
2.80
1.20
0.89
0.30
1.70
0.013
0.085
0.32
0.85
2.10
0.25
Max.
3.04
1.60
1.30
0.50
2.30
0.10
0.177
0.67
1.15
2.75
0.65
C
D
H
3-Lead SOT-23 Plastic
Surface Mounted Package
HSMC Package Code: N
K
J
Material:
•
Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
•
Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
*: Typical, Unit: mm
Important Notice:
•
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
•
HSMC reserves the right to make changes to its products without notice.
•
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
•
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
•
Head Office
(Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
•
Factory 1:
No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
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